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Register a new userUniversal dimensional crossover of domain wall dynamics in ferromagnetic films
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The magnetic domain wall motion driven by a magnetic field is studied in (Ga,Mn)As and (Ga,Mn)(As,P) films of different thicknesses. In the thermally activated creep regime, a kink in the velocity curves and a jump of the roughness exponent evidence a dimensional crossover in the domain wall dynamics. The measured values of the roughness exponent zeta_{1d} = 0.62 +/- 0.02 and zeta_{2d} = 0.45 +/- 0.04 are compatible with theoretical predictions for the motion of elastic line (d = 1) and surface (d = 2) in two and three dimensional media, respectively.
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We analyze the electric current and magnetic field driven domain wall motion in perpendicularly magnetized ultrathin ferromagnetic films in the presence of interfacial Dzyaloshinskii-Moriya interaction and both out-of-plane and in-plane uniaxial anisotropies. We obtain exact analytical Walker-type solutions in the form of one-dimensional domain walls moving with constant velocity due to both spin-transfer torques and out-of-plane magnetic field. These solutions are embedded into a larger family of propagating solutions found numerically. Within the considered model, we find the dependencies of the domain wall velocity on the material parameters and demonstrate that adding in-plane anisotropy may produce domain walls moving with velocities in excess of 500 m/s in realistic materials under moderate fields and currents.
We present an analytical theory of domain wall tilt due to a transverse in-plane magnetic field in a ferromagnetic nanostrip with out-of-plane anisotropy and Dzyaloshinskii-Moriya interaction (DMI). The theory treats the domain walls as one-dimensional objects with orientation-dependent energy, which interact with the sample edges. We show that under an applied field the domain wall remains straight, but tilts at an angle to the direction of the magnetic field that is proportional to the field strength for moderate fields and sufficiently strong DMI. Furthermore, we obtain a nonlinear dependence of the tilt angle on the applied field at weaker DMI. Our analytical results are corroborated by micromagnetic simulations.
We study the formation and control of metastable states of pairs of domain walls in cylindrical nanowires of small diameter where the transverse walls are the lower energy state. We show that these pairs form bound states under certain conditions, with a lifetime as long as 200ns, and are stabilized by the influence of a spin polarized current. Their stability is analyzed with a model based on the magnetostatic interaction and by 3D micromagnetic simulations. The apparition of bound states could hinder the operation of devices.
Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which nucleation is followed by radial domain growth. During this growth, the domain wall velocity exhibits a v ~ exp[-(1/E)^mu] dependence on the electric field, characteristic of a creep process. The domain wall motion was analyzed both in the context of stochastic nucleation in a periodic potential as well as the canonical creep motion of an elastic manifold in a disorder potential. The dimensionality of the films suggests that disorder is at the origin of the observed domain wall creep. To investigate the effects of changing the disorder in the films, defects were introduced during crystal growth (a-axis inclusions) or by heavy ion irradiation, producing films with planar and columnar defects, respectively. The presence of these defects was found to significantly decrease the creep exponent mu, from 0.62 - 0.69 to 0.38 - 0.5 in the irradiated films and 0.19 - 0.31 in the films containing a-axis inclusions.
Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the characteristic roughening of intrinsic 71{deg} stripe domains in BiFeO$_3$ thin films, we find unexpectedly high values of the roughness exponent {zeta} = 0.74 $pm$ 0.10, significantly different from those obtained for artificially written domain walls in this and other ferroelectric materials. The large value of the exponent suggests that a random field-dominated pinning, combined with stronger disorder and strain effects due to the step-bunching morphology of the samples, could be the dominant source of pinning in the system.
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