No Arabic abstract
We report on a combined measurement of high-resolution x-ray diffraction on powder and Raman scattering on single crystalline NiS2-xSex samples that exhibit the insulator-metal transition with Se doping. Via x-rays, an abrupt change in the bond length between Ni and S (Se) ions was observed at the transition temperature, in sharp contrast to the almost constant bond length between chalcogen ions. Raman scattering, a complementary technique with the unique sensitivity to the vibrations of chalcogen bonds, revealed no anomalies in the phonon spectrum, consistent with the x-ray diffraction results. This indicates the important role of the interaction between Ni and S (Se) in the insulator-metal transition. The potential implication of this interpretation is discussed in terms of current theoretical models.
The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-field approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding splitting in the S-S (Se-Se) dimer is identified as the main parameter controlling the size of the charge gap. The implications for the metal-insulator transition driven by pressure and Se doping are discussed.
The metal to insulator transition in the charge transfer NiS{2-x}Se{x} compound has been investigated through infrared reflectivity. Measurements performed by applying pressure to pure NiS2 (lattice contraction) and by Se-alloying (lattice expansion) reveal that in both cases an anomalous metallic state is obtained. We find that optical results are not compatible with the linear Se-alloying vs Pressure scaling relation previously established through transport, thus pointing out the substantially different microscopic origin of the two transitions.
We discuss Mott insulating and metallic phases of a model with $e_g$ orbital degeneracy to understand physics of Mn perovskite compounds. Quantum Monte Carlo and Lanczos diagonalization results are discussed in this model. To reproduce experimental results on charge gap and Jahn-Teller distortions, we show that a synergy between the strong correlation effects and the Jahn-Teller coupling is important. The incoherent charge dynamics and strong charge fluctuations are characteristic of the metallic phase accompanied with critical enhancement of short-ranged orbital correlation near the insulator.
The metal-insulator transition (MIT) of VO2 is discussed with particular emphasis on the structural instability of the rutile compounds toward dimerization. Ti substitution experiments reveal that the MIT is robust up to 20% Ti substitutions and occurs even in extremely thin V-rich lamellas in spinodally decomposed TiO2-VO2 composites, indicating that the MIT is insensitive to hole doping and essentially takes on a local character. These observations suggest that either electron correlation in the Mott-Hubbard sense or Peierls (Fermi-surface) instability plays a minor role on the MIT. Through a broad perspective of crystal chemistry on the rutile-related compounds, it is noted that VO2 and another MIT compound NbO2 in the family eventually lie just near the borderline between the two structural groups with the regular rutile structure and the distorted structures characterized by the formation of dimers with direct metal-metal bonding. The MITs of VO2 and NbO2 are natural consequences of structural transitions between the two groups, as all the d electrons are trapped in the bonding molecular orbitals of dimers at low temperatures. Such dimer crystals are ubiquitously found in early transition metal compounds having chain-like structures, such as MoBr3, NbCl4, Ti4O7, and V4O7, the latter two of which also exhibit MITs probably of the same origin. In a broader sense, the dimer crystal is a kind of molecular orbital crystals in which virtual molecules made of transition metal atoms with partially-filled t2g shells, such as dimers, trimers or larger ones, are generated by metal-metal bonding and are embedded into edge- or face-sharing octahedron networks of various kinds. The molecular orbital crystallization opens a natural route to stabilization of unpaired t2g electrons in crystals.
We present a study of the structure, the electric resistivity, the magnetic susceptibility, and the thermal expansion of La$_{1-x}$Eu$_x$CoO$_3$. LaCoO$_3$ shows a temperature-induced spin-state transition around 100 K and a metal-insulator transition around 500 K. Partial substitution of La$^{3+}$ by the smaller Eu$^{3+}$ causes chemical pressure and leads to a drastic increase of the spin gap from about 190 K in LaCoO$_3$ to about 2000 K in EuCoO$_3$, so that the spin-state transition is shifted to much higher temperatures. A combined analysis of thermal expansion and susceptibility gives evidence that the spin-state transition has to be attributed to a population of an intermediate-spin state with orbital order for $x<0.5$ and without orbital order for larger $x$. In contrast to the spin-state transition, the metal-insulator transition is shifted only moderately to higher temperatures with increasing Eu content, showing that the metal-insulator transition occurs independently from the spin-state distribution of the Co$^{3+}$ ions. Around the metal-insulator transition the magnetic susceptibility shows a similar increase for all $x$ and approaches a doping-independent value around 1000 K indicating that well above the metal-insulator transition the same spin state is approached for all $x$.