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Register a new userMetal-insulator transition in NiS$_{2-x}$Se$_x$
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The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-field approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding splitting in the S-S (Se-Se) dimer is identified as the main parameter controlling the size of the charge gap. The implications for the metal-insulator transition driven by pressure and Se doping are discussed.
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We report on a combined measurement of high-resolution x-ray diffraction on powder and Raman scattering on single crystalline NiS2-xSex samples that exhibit the insulator-metal transition with Se doping. Via x-rays, an abrupt change in the bond length between Ni and S (Se) ions was observed at the transition temperature, in sharp contrast to the almost constant bond length between chalcogen ions. Raman scattering, a complementary technique with the unique sensitivity to the vibrations of chalcogen bonds, revealed no anomalies in the phonon spectrum, consistent with the x-ray diffraction results. This indicates the important role of the interaction between Ni and S (Se) in the insulator-metal transition. The potential implication of this interpretation is discussed in terms of current theoretical models.
The metal to insulator transition in the charge transfer NiS{2-x}Se{x} compound has been investigated through infrared reflectivity. Measurements performed by applying pressure to pure NiS2 (lattice contraction) and by Se-alloying (lattice expansion) reveal that in both cases an anomalous metallic state is obtained. We find that optical results are not compatible with the linear Se-alloying vs Pressure scaling relation previously established through transport, thus pointing out the substantially different microscopic origin of the two transitions.
We present a study of the structure, the electric resistivity, the magnetic susceptibility, and the thermal expansion of La$_{1-x}$Eu$_x$CoO$_3$. LaCoO$_3$ shows a temperature-induced spin-state transition around 100 K and a metal-insulator transition around 500 K. Partial substitution of La$^{3+}$ by the smaller Eu$^{3+}$ causes chemical pressure and leads to a drastic increase of the spin gap from about 190 K in LaCoO$_3$ to about 2000 K in EuCoO$_3$, so that the spin-state transition is shifted to much higher temperatures. A combined analysis of thermal expansion and susceptibility gives evidence that the spin-state transition has to be attributed to a population of an intermediate-spin state with orbital order for $x<0.5$ and without orbital order for larger $x$. In contrast to the spin-state transition, the metal-insulator transition is shifted only moderately to higher temperatures with increasing Eu content, showing that the metal-insulator transition occurs independently from the spin-state distribution of the Co$^{3+}$ ions. Around the metal-insulator transition the magnetic susceptibility shows a similar increase for all $x$ and approaches a doping-independent value around 1000 K indicating that well above the metal-insulator transition the same spin state is approached for all $x$.
We present a detailed investigation of the magnetic and structural properties of magnetically doped 3D topological insulator Bi2Se3. From muon spin relaxation measurements in zero magnetic field, we find that even 5% Fe doping on the Bi site turns the full volume of the sample magnetic at temperatures as high as ~250 K. This is also confirmed by magnetization measurements. Two magnetic phases are identified; the first is observed between ~10-250 K while the second appears below ~10 K. These cannot be attributed to impurity phases in the samples. We discuss the nature and details of the observed magnetism and its dependence on doping level.
We present angle resolved photoemission (ARPES) data on Na-doped Ca$_2$CuO$_2$Cl$_2$. We demonstrate that the chemical potential shifts upon doping the system across the insulator to metal transition. The resulting low energy spectra reveal a gap structure which appears to deviate from the canonical $d_{x2-y2} ~ |cos(k_x a)-cos(k_y a)|$ form. To reconcile the measured gap structure with d-wave superconductivity one can understand the data in terms of two gaps, a very small one contributing to the nodal region and a very large one dominating the anti-nodal region. The latter is a result of the electronic structure observed in the undoped antiferromagnetic insulator. Furthermore, the low energy electronic structure of the metallic sample contains a two component structure in the nodal direction, and a change in velocity of the dispersion in the nodal direction at roughly 50 meV. We discuss these results in connection with photoemission data on other cuprate systems.
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