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Register a new userSimultaneous Switching of Multiple GaN Transistors in a High-Speed Switch
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A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.
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Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.
Beam diagnostics is important to guarantee good quality of beam in particle accelerator. Both the electron and positron run in the tunnel in some modern electron positron colliders such as Circular Electron Positron Collider (CEPC) to be built and Beijing Electron Positron Collider II (BEPC II). To measure the electron and positron beams, picking up of these two different bunches in real time is of notable concern. Because the time interval between adjacent electron and positron bunches is quite small, for example, 6 ns in CEPC, high-speed switch electronics is required. This paper presents the prototype design of a high-speed radio frequency (RF) electronics that can pick up nanosecond positron-electron beam bunches with a switching time of less than 6 ns. Fast separation of electron and positron is achieved based on RF switches and precise delay adjustment of the controlling signals (~10 ps). Initial tests have been conducted in the laboratory to evaluate the performance of electronics, the results indicate that this circuit can successfully pick up the bunch signal within a time interval of 6 ns, which makes it possible to further measure the electron and position beams simultaneously.
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in such a way to suppress runaway transitions. Using this circuit, we demonstrate the acquisition of $10^5$ I-V loops per second without the use of on-wafer current limiting transistors. This setup brings voltage sweeping measurements to a relevant timescale for applications, and enables many new experimental possibilities for device evaluation in a statistical context.
We present a method for the simultaneous observation of heteronuclear multi-quantum coherences (up to the 3rd order), which give an additional degree of freedom for ultralow magnetic field (ULF) MR experiments, where the chemical shift is negligible. The nonequilibrium spin state is generated by Signal Amplification By Reversible Exchange (SABRE) and detected at ULF with SQUID-based NMR. We compare the results obtained by the heteronuclei Correlated SpectroscopY (COSY) with a Flip Angle FOurier Series (FAFOS) method. COSY allows a quantitative analysis of homo- and heteronuclei quantum coherences.
We present the experimental observation of the reduction of multiple scattering of high-energy positively charged particles during channeling in single crystals. According to our measurements the rms angle of multiple scattering in the plane orthogonal to the plane of the channeling is less than half that for non-channeled particles moving in the same crystal. In the experiment we use focusing bent single crystals. Such crystals have a variable thickness in the direction of beam propagation. This allows us to measure rms angles of scattering as a function of thickness for channeled and non-channeled particles. The behaviour with thickness of non-channeled particles is in agreement with expectations whereas the behaviour of channeled particles has unexpected features. We give a semi-quantitative explanation of the observed effect.
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