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Register a new userPlasmonic waveguide-integrated nanowire laser
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Added by
Esteban Bermudez-Ure\\~na
Publication date
2018
fields
Physics
and research's language is
English
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Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing, to data communication technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic waveguides. We present experimental evidence of the lasing emission and coupling into the propagating modes of the V-grooves, enabling on-chip routing of coherent and sub-diffraction confined light with room temperature operation. Theoretical considerations suggest that the observed lasing is enabled by a waveguide hybrid photonic-plasmonic mode. This work represents a major advance towards the realization of application-oriented photonic circuits with integrated nanolaser sources.
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The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics. The creation of such low-noise laser sources is critical for emerging on-chip applications, ranging from coherent optical communications, photonic microwave oscillators remote sensing and optical rotational sensors. While Brillouin lasers are a promising solution to these challenges, new strategies are needed to create robust, compact, low power and low cost Brillouin laser technologies through wafer-scale integration. To date, chip-scale Brillouin lasers have remained elusive due to the difficulties in realization of these lasers on a commercial integration platform. In this paper, we demonstrate, for the first time, monolithically integrated Brillouin lasers using a wafer-scale process based on an ultra-low loss Si3N4/SiO2 waveguide platform. Cascading of stimulated Brillouin lasing to 10 Stokes orders was observed in an integrated bus-coupled resonator with a loaded Q factor exceeding 28 million. We experimentally quantify the laser performance, including threshold, slope efficiency and cascading dynamics, and compare the results with theory. The large mode volume integrated resonator and gain medium supports a TE-only resonance and unique 2.72 GHz free spectral range, essential for high performance integrated Brillouin lasing. The laser is based on a non-acoustic guiding design that supplies a broad Brillouin gain bandwidth. Characteristics for high performance lasing are demonstrated due to large intra-cavity optical power and low lasing threshold power. Consistent laser performance is reported for multiple chips across multiple wafers. This design lends itself to wafer-scale integration of practical high-yield, highly coherent Brillouin lasers on a chip.
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Exact solutions are obtained for all the modes of wave propagation along an anisotropic cylindrical waveguide. Closed-form expressions for the energy flow on the waveguide are also derived. For extremely anisotropic waveguide where the transverse permittivity is negative while the longitudinal permittivity is positive, only transverse magnetic (TM) and hybrid modes will propagate on the waveguide. At any given frequency the waveguide supports an infinite number of eigenmodes. Among the TM modes, at most only one mode is forward wave. The rest of them are backward waves which can have very large effective index. At a critical radius, the waveguide supports degenerate forward- and backward-wave modes with zero group velocity. These waveguides can be used as phase shifters and filters, and as optical buffers to slow down and trap light.
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