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Register a new userFreestanding dielectric nanohole array metasurface for mid-infrared wavelength applications
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We designed and simulated freestanding dielectric optical metasurfaces based on arrays of etched nanoholes in a silicon membrane. We showed $2pi$ phase control and high forward transmission at mid-infrared wavelengths by tuning the dimensions of the holes. We also identified the mechanisms responsible for high forward scattering efficiency and showed that these conditions are connected with the well-known Kerker conditions already proposed for isolated scatterers. A beam deflector was designed and optimized through sequential particle swarm and gradient descent optimization to maximize transmission efficiency and reduce unwanted grating orders. Such freestanding silicon nanohole array metasurfaces are promising for the realization of silicon based mid-infrared optical elements.
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Light emitted from single-mode semiconductor lasers generally has large divergence angles, and high numerical aperture lenses are required for beam collimation. Visible and near infrared lasers are collimated using aspheric glass or plastic lenses, yet collimation of mid-infrared quantum cascade lasers typically requires more costly aspheric lenses made of germanium, chalcogenide compounds, or other infrared-transparent materials. Here we report mid-infrared dielectric metasurface flat lenses that efficiently collimate the output beam of single-mode quantum cascade lasers. The metasurface lenses are composed of amorphous silicon posts on a flat sapphire substrate and can be fabricated at low cost using a single step conventional UV binary lithography. Mid-infrared radiation from a 4.8 $mu$m distributed-feedback quantum cascade laser is collimated using a polarization insensitive metasurface lens with 0.86 numerical aperture and 79% transmission efficiency. The collimated beam has a half divergence angle of 0.36$^circ$ and beam quality factor of $M^2$=1.02.
The mid-wave infrared (MWIR) spectral region (3-5 {mu}m) is important to a vast variety of applications in imaging, sensing, spectroscopy, surgery, and optical communications. Efficient third-harmonic generation (THG), converting light from the MWIR range into the near-infrared, a region with mature optical detection and manipulation technologies, offers the opportunity to mitigate a commonly recognized limitation of current MWIR systems. In this work, we present the possibility of boosting THG in the MWIR through a metasurface design. Specifically, we demonstrate a 30-fold enhancement in a highly nonlinear phase change material Ge2Sb2Se4Te1 (GSST), by patterning arrays of subwavelength cylinders supporting a magnetic dipolar resonance. The unprecedented broadband transparency, large refractive index, and remarkably high nonlinear response, together with unique phase-change properties, make GSST-based metasurfaces an appealing solution for reconfigurable and ultra-compact nonlinear devices operating in the MWIR.
Resonant metasurfaces have received extensive attention due to their sharp spectral feature and extraordinary field enhancement. In this work, by breaking the in-plane symmetry of silicon nanopillars, we achieve a sharp Fano resonance. The far-field radiation and near-field distribution of metasurfaces are calculated and analyzed to further uncover the resonant performance of metasurfaces. Moreover, the theoretical derivation and simulation exhibit an inverse quadratic dependence of Q-factors on asymmetry parameters, revealing that the resonance is governed by the symmetry-protected bound states in the continuum. Finally we experimentally demonstrate the sharp resonance, and employ it to effciently boost the third-harmonic generation. This enhancement can be attributed to the strong optical intensity enhancement inside the metasurface.
Compact and robust cold atom sources are increasingly important for quantum research, especially for transferring cutting-edge quantum science into practical applications. In this letter, we report on a novel scheme that utilizes a metasurface optical chip to replace the conventional bulky optical elements used to produce a cold atomic ensemble with a single incident laser beam, which is split by the metasurface into multiple beams of the desired polarization states. Atom numbers $~10^7$ and temperatures (about 35 ${mu}$K) of relevance to quantum sensing are achieved in a compact and robust fashion. Our work highlights the substantial progress towards fully integrated cold atom quantum devices by exploiting metasurface optical chips, which may have great potential in quantum sensing, quantum computing and other areas.
We investigate the nonlinear optical response of a commercial extended-wavelength In$_{0.81}$Ga$_{0.19}$As photodetector. Degenerate two-photon absorption in the mid-infrared range is observed at room temperature using a quantum cascade laser emitting at $lambda=4.5~mu$m as the excitation source. From the measured two-photon photocurrent signal we extract a two-photon absorption coefficient $beta^{(2)} = 0.6 pm 0.2$ cm/MW, in agreement with the theoretical value obtained from the $E_g^{-3}$ scaling law. Considering the wide spectral range covered by extended-wavelength In$_x$Ga$_{1-x}$As alloys, this result holds promise for new applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 $mu$m.
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