Do you want to publish a course? Click here

Mid infrared two-photon absorption in a room-temperature extended-wavelength InGaAs photodetector

159   0   0.0 ( 0 )
 Added by Marco Piccardo
 Publication date 2017
  fields Physics
and research's language is English




Ask ChatGPT about the research

We investigate the nonlinear optical response of a commercial extended-wavelength In$_{0.81}$Ga$_{0.19}$As photodetector. Degenerate two-photon absorption in the mid-infrared range is observed at room temperature using a quantum cascade laser emitting at $lambda=4.5~mu$m as the excitation source. From the measured two-photon photocurrent signal we extract a two-photon absorption coefficient $beta^{(2)} = 0.6 pm 0.2$ cm/MW, in agreement with the theoretical value obtained from the $E_g^{-3}$ scaling law. Considering the wide spectral range covered by extended-wavelength In$_x$Ga$_{1-x}$As alloys, this result holds promise for new applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 $mu$m.



rate research

Read More

High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed room-temperature mid-wave infrared interband cascade photodetector (ICIP) based on a type-II InAs/GaSb superlattice. The devices show an optical cut-off wavelength around 5um and a 3-dB bandwidth up to 7.04 GHz. The relatively low dark current density around 9.39 x 10-2 A/cm2 under -0.1 V is also demonstrated at 300 K. These results validate the advantages of ICIPs to achieve both high-frequency operation and low noise at room temperature. Limitations on the high-speed performance of the detector are also discussed based on the S-parameter analysis and other RF performance measurement.
408 - Yi Zhu , Vidur Raj , Ziyuan Li 2021
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.
We exploited graphene nanoribbons based meta-surface to realize coherent perfect absorption (CPA) in the mid-infrared regime. It was shown that quasi-CPA frequencies, at which CPA can be demonstrated with proper phase modulations, exist for the graphene meta-surface with strong resonant behaviors. The CPA can be tuned substantially by merging the geometric design of the meta-surface and the electrical tunability of graphene. Furthermore, we found that the graphene nanoribbon meta-surface based CPA is realizable with experimental graphene data. The findings of CPA with graphene meta-surface can be generalized for potential applications in optical detections and signal processing with two-dimensional optoelectronic materials.
Black phosphorus (BP), an emerging two-dimensional (2D) material with intriguing optical properties, forms a promising building block in optics and photonics devices. In this work, we propose a simple structure composed of BP sandwiched by polymer and dielectric materials with low index contrast, and numerically demonstrate the perfect absorption mechanism via the critical coupling of guided resonances in the mid-infrared. Due to the inherent in-plane anisotropic feature of BP, the proposed structure exhibits highly polarization-dependent absorption characteristics, i.e., the optical absorption of the structure reaches 99.9$%$ for TM polarization and only 3.2$%$ for TE polarization at the same wavelength. Furthermore, the absorption peak and resonance wavelength can be flexibly tuned by adjusting the electron doping of BP, the geometrical parameters of the structure and the incident angles of light. With high efficiency absorption, the remarkable anisotropy, flexible tunability and easy-to-fabricate advantages, the proposed structure shows promising prospects in the design of polarization-selective and tunable high-performance devices in the mid-infrared, such as polarizers, modulators and photodetectors.
We designed and simulated freestanding dielectric optical metasurfaces based on arrays of etched nanoholes in a silicon membrane. We showed $2pi$ phase control and high forward transmission at mid-infrared wavelengths by tuning the dimensions of the holes. We also identified the mechanisms responsible for high forward scattering efficiency and showed that these conditions are connected with the well-known Kerker conditions already proposed for isolated scatterers. A beam deflector was designed and optimized through sequential particle swarm and gradient descent optimization to maximize transmission efficiency and reduce unwanted grating orders. Such freestanding silicon nanohole array metasurfaces are promising for the realization of silicon based mid-infrared optical elements.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا