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Register a new userEnhanced shot noise of multiple Andreev reflections in a carbon nanotube quantum dot in SU(2) and SU(4) Kondo regimes
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The sensitivity of shot noise to the interplay between Kondo correlations and superconductivity is investigated in a carbon nanotube quantum dot connected to superconducting electrodes. Depending on the gate voltage, the SU(2) and SU(4) Kondo unitary regimes can be clearly identified. We observe enhancement of the shot noise via the Fano factor in the superconducting state. Its divergence at low bias voltage, which is more pronounced in the SU(4) regime than in the SU(2) one, is larger than what is expected from proliferation of multiple Andreev reflections predicted by the existing theories. Our result suggests that Kondo effect is responsible for this strong enhancement.
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Understanding the interplay between many-body phenomena and non-equilibrium in systems with entangled spin and orbital degrees of freedom is a central objective in nano-electronics. We demonstrate that the combination of Coulomb interaction, spin-orbit coupling and valley mixing results in a particular selection of the inelastic virtual processes contributing to the Kondo resonance in carbon nanotubes at low temperatures. This effect is dictated by conjugation properties of the underlying carbon nanotube spectrum at zero and finite magnetic field. Our measurements on a clean carbon nanotube are complemented by calculations based on a new approach to the non-equilibrium Kondo problem which well reproduces the rich experimental observations in Kondo transport.
We study the Kondo effect in a CNT(left lead)-CNT(QD)-CNT(right lead) structure. Here CNT is a single-wall metallic carbon nanotube, for which 1) the valence and conduction bands of electrons with zero orbital angular momentum ($m=0$) coalesc at the two valley points ${bf{K}}$ and ${bf{K}}$ of the first Brillouin zone and 2) the energy spectrum of electrons with $m e 0$ has a gap whose size is proportional to $|m|$. Following adsorption of hydrogen atoms and application of an appropriately designed gate potential, electron energy levels in the CNT(QD) are tunable to have: 1) two-fold spin degeneracy; 2) two-fold isospin (valley) degeneracy; 3) three-fold orbital degeneracy $m=0,pm1$. As a result, an SU(12) Kondo effect is realized with remarkably high Kondo temperature. Unlike the SU(2) case, the low temperature conductance and magnetic susceptibility have a peak at finite temperature. Moreover, the magnetic susceptibilities for parallel and perpendicular magnetic fields (WRT the tube axis) display anisotropy with a universal ratio $chi_{rm{imp}}^parallel / chi_{rm{imp}}^perp=eta$ that depends only on the electrons orbital and spin $g$ factors.
We study finite-temperature properties of the Kondo effect in a carbon nanotube (CNT) quantum dot using the Wilson numerical renormalization group (NRG). In the absence of magnetic fields, four degenerate energy levels of the CNT consisting of spin and orbital degrees of freedom give rise to the SU(4) Kondo effect. We revisit the universal scaling behavior of the SU(4) conductance for quarter- and half-filling in a wide temperature range. We find that the filling dependence of the universal scaling behavior at low temperatures $T$ can be explained clearly with an extended Fermi-liquid theory. This theory clarifies that a $T^{2}$ coefficient of conductance becomes zero at quarter-filling whereas the coefficient at half-filling is finite. We also study a field-induced crossover from the SU(4) to SU(2) Kondo state observed at the half-filled CNT dot. The crossover is caused by the matching of the spin and orbital Zeeman splittings, which lock two levels among the four at the Fermi level even in magnetic fields $B$. We find that the conductance shows the SU($4$) scaling behavior at $mu_{B}B<k_{B}T_{K}^{mathrm{SU(4)}}$ and it exhibits the SU($2$) universality at $mu_{B}Bgg k_{B}T_{K}^{mathrm{SU(4)}}$, where $T_{K}^{mathrm{SU(4)}}$ is the SU($4$) Kondo temperature. To clarify how the excited states evolve along the SU(4) to SU(2) crossover, we also calculate the spectral function. The results show that the Kondo resonance width of the two states locked at the Fermi level becomes sharper with increasing fields. The spectral peaks of the other two levels moving away from the Fermi level merge with atomic limit peaks for $mu_{B}B gtrsim k_{B}T_{K}^{mathrm{SU(4)}}$.
We analyze, from a quantum information theory perspective, the possibility of realizing a SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.
The current emission noise of a carbon nanotube quantum dot in the Kondo regime is measured at frequencies $ u$ of the order or higher than the frequency associated with the Kondo effect $k_B T_K/h$, with $T_K$ the Kondo temperature. The carbon nanotube is coupled via an on-chip resonant circuit to a quantum noise detector, a superconductor-insulator-superconductor junction. We find for $h u approx k_B T_K$ a Kondo effect related singularity at a voltage bias $eV approx h u $, and a strong reduction of this singularity for $h u approx 3 k_B T_K$, in good agreement with theory. Our experiment constitutes a new original tool for the investigation of the non-equilibrium dynamics of many-body phenomena in nanoscale devices.
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