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Register a new userSU(12) Kondo Effect in Carbon Nanotube Quantum Dot
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We study the Kondo effect in a CNT(left lead)-CNT(QD)-CNT(right lead) structure. Here CNT is a single-wall metallic carbon nanotube, for which 1) the valence and conduction bands of electrons with zero orbital angular momentum ($m=0$) coalesc at the two valley points ${bf{K}}$ and ${bf{K}}$ of the first Brillouin zone and 2) the energy spectrum of electrons with $m e 0$ has a gap whose size is proportional to $|m|$. Following adsorption of hydrogen atoms and application of an appropriately designed gate potential, electron energy levels in the CNT(QD) are tunable to have: 1) two-fold spin degeneracy; 2) two-fold isospin (valley) degeneracy; 3) three-fold orbital degeneracy $m=0,pm1$. As a result, an SU(12) Kondo effect is realized with remarkably high Kondo temperature. Unlike the SU(2) case, the low temperature conductance and magnetic susceptibility have a peak at finite temperature. Moreover, the magnetic susceptibilities for parallel and perpendicular magnetic fields (WRT the tube axis) display anisotropy with a universal ratio $chi_{rm{imp}}^parallel / chi_{rm{imp}}^perp=eta$ that depends only on the electrons orbital and spin $g$ factors.
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Over-screened Kondo effect is feasible in carbon nanotube quantum dot junction hosting a spin $tfrac{1}{2}$ atom with single $s$-wave valence electron (e.g Au). The idea is to use the two valleys as two symmetry protected flavor quantum numbers $xi={bf K}, {bf K}$. Perturbative RG analysis exposes the finite weak-coupling two-channel fixed point, where the Kondo temperature is estimated to be around $0.5div5$~K. Remarkably, occurrence of two different scaling regimes implies a non-monotonic dependence of the conductance as function of temperature.
We investigate a tunable two-impurity Kondo system in a strongly correlated carbon nanotube double quantum dot, accessing the full range of charge regimes. In the regime where both dots contain an unpaired electron, the system approaches the two-impurity Kondo model. At zero magnetic field the interdot coupling disrupts the Kondo physics and a local singlet state arises, but we are able to tune the crossover to a Kondo screened phase by application of a magnetic field. All results show good agreement with a numerical renormalization group study of the device.
We calculate the conductance through a single quantum dot coupled to metallic leads, modeled by the spin 1/2 Anderson model. We adopt the finite-U extension of the noncrossing approximation method. Our results are in good agreement with exact numerical renormalization group results both in the high temperature and in the Kondo (low temperature) regime. Thanks to this approach, we were able to fit fairly well recently reported measurements by S. De Franceschi et al. in a quantum dot device. We show that, contrarily to what previously suggested, the conductance of this particular device can be understood within the spin-1/2 Anderson model, in which the effects of the multilevel structure of the dot are neglected.
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that the Kondo temperature for each orbital channel can be largely different. The tunneling through the Kondo resonance almost fully develops in the region $T lsim 0.1 T_{K}^{*} sim 0.2 T_{K}^{*}$, where $T_{K}^{*}$ is the lowest Kondo temperature when the gate voltage is varied. At high temperatures the conductance changes to the usual Coulomb oscillations type. In the intermediate temperature region, the degree of the coherency of each orbital channel is different, so strange behaviors of the conductance can appear. For example, the conductance once increases and then decreases with temperature decreasing when it is suppressed at T=0 by the interference cancellation between different channels. The interaction effects in the quantum dot systems lead the sensitivities of the conductance to the temperature and to the gate voltage.
We examine the low energy behavior of a double quantum dot in a regime where spin and pseudospin excitations are degenerate. The individual quantum dots are described by Anderson impurity models with an on-site interaction $U$ which are capacitively coupled by an interdot interaction $U_{12}<U$. The low energy response functions are expressed in terms of renormalized parameters, which can be deduced from an analysis of the fixed point in a numerical renormalization group calculation. At the point where the spin and pseudospin degrees of freedom become degenerate, the free quasiparticle excitations have a phase shift of $pi/4$ and a 4-fold degeneracy. We find, however, when the quasiparticle interactions are included, that the low energy effective model has SU(4) symmetry only in the special case $U_{12}=U$ unless both $U$ and $U_{12}$ are greater than $D$, the half-bandwidth of the conduction electron bath. We show that the gate voltage dependence of the temperature dependent differential conductance observed in recent experiments can be described by a quasiparticle density of states with temperature dependent renormalized parameters.
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