Do you want to publish a course? Click here

Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents

183   0   0.0 ( 0 )
 Publication date 2018
  fields Physics
and research's language is English




Ask ChatGPT about the research

At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ capping. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface.



rate research

Read More

We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y$_3$Fe$_5$O$_{12}$ (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the non-local resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation. These results open a new path towards the development of spin logics.
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), damping-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation.
328 - Matthias Althammer 2018
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can not only flow in electrical conductors via mobile charge carriers, but also in magnetically ordered electrical insulators as a flow of spin excitation quanta. Over the course of the last years remarkable results have been obtained in heterostructures consisting of magnetically ordered insulators interfaced with a normal metal, where a pure spin current flows across the interface. This topical review article deals with the fundamental principles, experimental findings and recent developments in the field of pure spin currents in magnetically ordered insulators. We here put our focus onto four different manifestations of pure spin currents in such heterostructures: The spin pumping effect, the longitudinal spin Seebeck effect, the spin Hall magnetoresistance and the all-electrical detection of magnon transport in non-local device concepts. In this article, we utilize a common theoretical framework to explain all four effects and explain important material systems (especially rare-earth iron garnets) used in the experiments. For each effect we introduce basic measurement techniques and detection schemes and discuss their application in the experiment. We account for the remarkable progress achieved in each field by reporting the recent progress in each field and by discussing research highlights obtained in our group. Finally, we conclude the review article with an outlook on future challenges and obstacles in the field of pure spin currents in magnetically ordered insulator / normal metal heterostructures.
We investigate the absorption of a spin current at a ferromagnetic-metal/Pt-oxide interface by measuring current-induced ferromagnetic resonance. The spin absorption was characterized by the magnetic damping of the heterostructure. We show that the magnetic damping of a Ni$_{81}$Fe$_{19}$ film is clearly enhanced by attaching Pt-oxide on the Ni$_{81}$Fe$_{19}$ film. The damping enhancement is disappeared by inserting an ultrathin Cu layer between the Ni$_{81}$Fe$_{19}$ and Pt-oxide layers. These results demonstrate an essential role of the direct contact between the Ni$_{81}$Fe$_{19}$ and Pt-oxide to induce sizable interface spin-orbit coupling. Furthermore, the spin-absorption parameter of the Ni$_{81}$Fe$_{19}$/Pt-oxide interface is comparable to that of intensively studied heterostructures with strong spin-orbit coupling, such as an oxide interface, topological insulators, metallic junctions with Rashba spin-orbit coupling. This result illustrates strong spin-orbit coupling at the ferromagnetic-metal/Pt-oxide interface, providing an important piece of information for quantitative understanding the spin absorption and spin-charge conversion at the ferromagnetic-metal/metallic-oxide interface.
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا