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Register a new userTuning the two-electron hybridization and spin states in parallel-coupled InAs quantum dots
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We study spin transport in the one- and two-electron regimes of parallel-coupled double quantum dots (DQDs). The DQDs are formed in InAs nanowires by a combination of crystal-phase engineering and electrostatic gating, with an interdot tunnel coupling ($t$) tunable by one order of magnitude. Large single-particle energy separations (up to 10 meV) and $|g^*|$ factors ($sim$10) enable detailed studies of the $B$-field-induced transition from a singlet-to-triplet ground state as a function of $t$. In particular, we investigate how the magnitude of the spin-orbit-induced singlet-triplet anticrossing depends on $t$. For cases of strong coupling, we find values of 230 $mu$eV for the anticrossing using excited-state spectroscopy. Experimental results are reproduced by calculations based on rate equations and a DQD model including a single orbital in each dot.
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We use tunneling spectroscopy to study the evolution of few-electron spin states in parallel InAs nanowire double quantum dots (QDs) as a function of level detuning and applied magnetic field. Compared to the much more studied serial configuration, parallel coupling of the QDs to source and drain greatly expands the probing range of excited state transport. Owing to a strong confinement, we can here isolate transport involving only the very first interacting single QD orbital pair. For the (2,0)-(1,1) charge transition, with relevance for spin-based qubits, we investigate the excited (1,1) triplet, and hybridization of the (2,0) and (1,1) singlets. An applied magnetic field splits the (1,1) triplet, and due to spin-orbit induced mixing with the (2,0) singlet, we clearly resolve transport through all triplet states near the avoided singlet-triplet crossings. Transport calculations, based on a simple model with one orbital on each QD, fully replicate the experimental data. Finally, we observe an expected mirrored symmetry between the 1-2 and 2-3 electron transitions resulting from the two-fold spin degeneracy of the orbitals.
We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field.
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $sim 0.6, mathrm{mT}$. We estimate the spin-orbit length in the system to be $sim 5-10, mu mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.
We study theoretically electron spins in nanowire quantum dots placed inside a transmission line resonator. Because of the spin-orbit interaction, the spins couple to the electric component of the resonator electromagnetic field and enable coherent manipulation, storage, and read-out of quantum information in an all-electrical fashion. Coupling between distant quantum-dot spins, in one and the same or different nanowires, can be efficiently performed via the resonator mode either in real time or through virtual processes. For the latter case we derive an effective spin-entangling interaction and suggest means to turn it on and off. We consider both transverse and longitudinal types of nanowire quantum-dots and compare their manipulation timescales against the spin relaxation times. For this, we evaluate the rates for spin relaxation induced by the nanowire vibrations (phonons) and show that, as a result of phonon confinement in the nanowire, this rate is a strongly varying function of the spin operation frequency and thus can be drastically reduced compared to lateral quantum dots in GaAs. Our scheme is a step forward to the formation of hybrid structures where qubits of different nature can be integrated in a single device.
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.
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