Single x-ray photons can be resonantly scattered and stored with the help of suitable transitions in the atomic nucleus. Here, we investigate theoretically means of mechanical-free modulation for the frequency spectra of such x-ray photons via periodic switching of an external magnetic field. We show that periodically switching on and off an external magnetic field generating hyperfine splitting of the nuclear transition leads to the generation of equidistant narrow sidebands of the resonantly scattered response. This frequency-comb-like structure depends on the magnitude and orientation of the applied magnetic field and on the switching period. An analytical approach for the characterization of the comblike frequency spectrum is presented. The feasibility of the external control on the frequency modulation of the x-ray response is discussed in view of possible applications in high-resolution spectroscopy or quantum technology.
By solving two-component spinor equation for massless Dirac Fermions, we show that graphene under a periodic external magnetic field exhibits a unique energy spectrum: At low energies, Dirac Fermions are localized inside the magnetic region with discrete Landau energy levels, while at higher energies, Dirac Fermions are mainly found in non-magnetic regions with continuous energy bands originating from wavefunctions analogous to particle-in-box states of electrons. These findings offer a new methodology for the control and tuning of massless Dirac Fermions in graphene.
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
We report a study of the magnetic field dependence of the photo-luminescence of NV$^-$ centers (negatively charged nitrogen-vacancy centers) in diamond single crystals. In such a magnetic field dependence characteristic lines are observed, which are coming from Level Anti-Crossings (LACs) in the coupled electron-nuclear spin system. For enhancing the sensitivity, we used lock-in detection to measure the photo-luminescence intensity and observed a remarkably strong dependence of the LAC-derived lines on the modulation frequency. Upon decreasing of the modulation frequency from 12 kHz to 17 Hz the amplitude of the lines increases by approximately two orders of magnitude. To take a quantitative account for such effects, we developed a theoretical model, which describes the spin dynamics in the coupled electron-nuclear spin system under the action of an oscillating external magnetic field. Good agreement between experiments and theory allows us to conclude that the observed effects are originating from coherent spin polarization exchange in the NV$^-$ center. Our results are of great practical importance allowing one to optimize the experimental conditions for probing LAC-derived lines in diamond defect centers.
The subject of the present theoretical and experimental investigations is the effect of the external magnetic field induction on dark current and a possibility of breakdown. The generalization of the Fowler-Nordheim equation makes it possible to take into account the influence of a magnetic field parallel to the cathode surface on the field emission current. The reduction in the breakdown voltage due to the increment in electron-impact ionization was theoretical predicted. Experimentally shown that the presence of a magnetic field about a tenth as a large as the cutoff magnetic field [18] reduces the breakdown voltage by 10% to 20% for practically all cathodes no matter what their surface treatment.
We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced-gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50AA would have adequate switching characteristics.