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Register a new userSwitching behavior of semiconducting carbon nanotubes under an external electric field
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We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced-gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50AA would have adequate switching characteristics.
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We have used a femtosecond pump-probe impulsive Raman technique to explore the polarization dependence of coherent optical phonons in highly-purified and aligned semiconducting single-wall carbon nanotubes (SWCNTs). Coherent phonon spectra for the radial breathing modes (RBMs) exhibit a different monochromatic frequency between the film and solution samples, indicating the presence of differing exciton excitation processes. By varying the polarization of the incident pump beam on the aligned SWCNT film, we found that the anisotropy of the coherent RBM excitation depends on the laser wavelength, which we consider to be associated with the resonant and off-resonant behavior of RBM excitation.
Ultrafast terahertz spectroscopy accesses the {em dark} excitonic ground state in resonantly-excited (6,5) SWNTs via internal, direct dipole-allowed transitions between lowest lying dark-bright pair state $sim$6 meV. An analytical model reproduces the response which enables quantitative analysis of transient densities of dark excitons and {em e-h} plasma, oscillator strength, transition energy renormalization and dynamics. %excitation-induced renormalization. Non-equilibrium, yet stable, quasi-1D quantum states with dark excitonic correlations rapidly emerge even with increasing off-resonance photoexcitation and experience a unique crossover to complex phase-space filling of %a complex distribution between both dark and bright pair states, different from dense 2D/3D excitons influenced by the thermalization, cooling and ionization to free carriers.
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
Through ultrafast pump-probe spectroscopy with intense pump pulses and a wide continuum probe, we show that interband exciton peaks in single-walled carbon nanotubes (SWNTs) are extremely stable under high laser excitations. Estimates of the initial densities of excitons from the excitation conditions, combined with recent theoretical calculations of exciton Bohr radii for SWNTs, suggest that their positions do not change at all even near the Mott density. In addition, we found that the presence of lowest-subband excitons broadens all absorption peaks, including those in the second-subband range, which provides a consistent explanation for the complex spectral dependence of pump-probe signals reported for SWNTs.
We study the binding energies and optical properties of direct and indirect excitons in monolayers and double layer heterostructures of Xenes: silicene, germanene, and stanene. It is demonstrated that an external electric field can be used to tune the eigenenergies and optical properties of excitons by changing the effective mass of charge carriers. The Schr{o}dinger equation with field-dependent exciton reduced mass is solved by using the Rytova-Keldysh (RK) potential for direct excitons, while both the RK and Coulomb potentials are used for indirect excitons. It is shown that for indirect excitons, the choice of interaction potential can cause huge differences in the eigenenergies at large electric fields and significant differences even at small electric fields. Furthermore, our calculations show that the choice of material parameters has a significant effect on the binding energies and optical properties of direct and indirect excitons. These calculations contribute to the rapidly growing body of research regarding the excitonic and optical properties of this new class of two dimensional semiconductors.
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