Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userComparison of different bonding techniques for efficient strain transfer using piezoelectric actuators
153
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
In this paper strain transfer efficiencies from single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the soft SU8 bonding in comparison to the hard bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows to explain this unexpected result with the presence of complex interface structures between the different layers.
rate research
Read More
We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the piezoelectric actuator. We have identified an optimal set of parameters that reproducibly transfers the largest distortions at room temperature. We have studied strains produced not only by the frequently used uniaxial piezostressors but also by the biaxial ones which replicate the routinely performed experiments using substrate-induced strains but with the advantage of a continuously tunable lattice distortion. The time evolution of the strain response and the sample tilting and/or bending are also analyzed and discussed.
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
Tuning and reconfiguring nanophotonic components is needed to realize systems incorporating many components. The electrostatic force can deform a structure and tune its optical response. Despite the success of electrostatic actuators, they suffer from trade-offs between tuning voltage, tuning range, and on-chip area. Piezoelectric actuation could resolve all these challenges. Standard materials possess piezoelectric coefficients on the order of ${0.01}~text{nm/V}$, suggesting extremely small on-chip actuation using potentials on the order of one volt. Here we propose and demonstrate compact piezoelectric actuators, called nanobenders, that transduce tens of nanometers per volt. By leveraging the non-uniform electric field from submicron electrodes, we generate bending of a piezoelectric nanobeam. Combined with a sliced photonic crystal cavity to sense displacement, we show tuning of an optical resonance by $sim 5~text{nm/V}~({0.6}~text{THz/V})$ and between $1520$ and $1560~text{nm}$ ($sim 400$ linewidths) with only $ {4}~text{V}$. Finally, we consider other tunable nanophotonic components enabled by nanobenders.
We present a high resolution method for measuring magnetostriction in millisecond pulsed magnetic fields at cryogenic temperatures with a sensitivity of $1.11times10^{-11}/sqrt{rm Hz}$. The sample is bonded to a thin piezoelectric plate, such that when the samples length changes, it strains the piezoelectric and induces a voltage change. This method is more sensitive than a fiber-Bragg grating method. It measures two axes simultaneously instead of one. The gauge is small and versatile, functioning in DC and millisecond pulsed magnetic fields. We demonstrate its use by measuring the magnetostriction of Ca$_3$Co$_{1.03}$Mn$_{0.97}$O$_6$ single crystals in pulsed magnetic fields. By comparing our data to new and previously published results from a fiber-Bragg grating magnetostriction setup, we confirm that this method detects magnetostriction effects. We also demonstrate the small size and versatility of this technique by measuring angle dependence with respect to the applied magnetic field in a rotator probe in 65 T millisecond pulsed magnetic fields.
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or Neel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures, which suppresses Joule heating caused by switching currents and may enable low energy-consuming electronic devices. Here, we combine the two material classes to explore changes of the resistance of the high-Neel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field, which are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunneling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory which is fully operational in strong magnetic fields and has potential for low-energy and high-density memory applications.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
