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Register a new userComputing with volatile memristors: An application of non-pinched hysteresis
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The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymorphic circuit implementing in-memory computing gates such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices.
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It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.
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