Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userNon-volatile Complementary Resistive Switch-based Content Addressable Memory
151
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$rightarrow$ON state transition that enables this novel CRS application.
rate research
Read More
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al.
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.
In cloud and edge computing models, it is important that compute devices at the edge be as power efficient as possible. Long short-term memory (LSTM) neural networks have been widely used for natural language processing, time series prediction and many other sequential data tasks. Thus, for these applications there is increasing need for low-power accelerators for LSTM model inference at the edge. In order to reduce power dissipation due to data transfers within inference devices, there has been significant interest in accelerating vector-matrix multiplication (VMM) operations using non-volatile memory (NVM) weight arrays. In NVM array-based hardware, reduced bit-widths also significantly increases the power efficiency. In this paper, we focus on the application of quantization-aware training algorithm to LSTM models, and the benefits these models bring in terms of resilience against both quantization error and analog device noise. We have shown that only 4-bit NVM weights and 4-bit ADC/DACs are needed to produce equivalent LSTM network performance as floating-point baseline. Reasonable levels of ADC quantization noise and weight noise can be naturally tolerated within our NVMbased quantized LSTM network. Benchmark analysis of our proposed LSTM accelerator for inference has shown at least 2.4x better computing efficiency and 40x higher area efficiency than traditional digital approaches (GPU, FPGA, and ASIC). Some other novel approaches based on NVM promise to deliver higher computing efficiency (up to 4.7x) but require larger arrays with potential higher error rates.
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.
Modern computing systems are embracing non-volatile memory (NVM) to implement high-capacity and low-cost main memory. Elevated operating voltages of NVM accelerate the aging of CMOS transistors in the peripheral circuitry of each memory bank. Aggressive device scaling increases power density and temperature, which further accelerates aging, challenging the reliable operation of NVM-based main memory. We propose HEBE, an architectural technique to mitigate the circuit aging-related problems of NVM-based main memory. HEBE is built on three contributions. First, we propose a new analytical model that can dynamically track the aging in the peripheral circuitry of each memory bank based on the banks utilization. Second, we develop an intelligent memory request scheduler that exploits this aging model at run time to de-stress the peripheral circuitry of a memory bank only when its aging exceeds a critical threshold. Third, we introduce an isolation transistor to decouple parts of a peripheral circuit operating at different voltages, allowing the decoupled logic blocks to undergo long-latency de-stress operations independently and off the critical path of memory read and write accesses, improving performance. We evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results show that HEBE significantly improves both performance and lifetime of NVM-based main memory.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
