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Quantum Thermal Rectification to design thermal diodes and transistors

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 Added by Karl Joulain
 Publication date 2016
  fields Physics
and research's language is English
 Authors Karl Joulain




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We study in this article how heat can be exchanged between two level systems (TLS) each of them being coupled to a thermal reservoir. Calculation are performed solving a master equation for the density matrix using the Born markov-approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimization.



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128 - Qizhang Li , Haiyu He (1 2021
We propose a mechanism to substantially rectify radiative heat flow by matching thin films of metal-to-insulator transition materials and polar dielectrics in the electromagnetic near field. By leveraging the distinct scaling behaviors of the local density of states with film thickness for metals and insulators, we theoretically achieve rectification ratios over 140-a 10-fold improvement over the state of the art-with nanofilms of vanadium dioxide and cubic boron nitride in the parallel-plane geometry at experimentally feasible gap sizes (~100 nm). Our rational design offers relative ease of fabrication, flexible choice of materials, and robustness against deviations from optimal film thicknesses. We expect this work to facilitate the application of thermal diodes in solid-state thermal circuits and energy conversion devices.
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