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Register a new userThin-film radiative thermal diode with large rectification
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We propose a mechanism to substantially rectify radiative heat flow by matching thin films of metal-to-insulator transition materials and polar dielectrics in the electromagnetic near field. By leveraging the distinct scaling behaviors of the local density of states with film thickness for metals and insulators, we theoretically achieve rectification ratios over 140-a 10-fold improvement over the state of the art-with nanofilms of vanadium dioxide and cubic boron nitride in the parallel-plane geometry at experimentally feasible gap sizes (~100 nm). Our rational design offers relative ease of fabrication, flexible choice of materials, and robustness against deviations from optimal film thicknesses. We expect this work to facilitate the application of thermal diodes in solid-state thermal circuits and energy conversion devices.
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Hyperbolic metamaterials (HMMs) support propagating waves with arbitrarily large wavevectors over broad spectral ranges, and are uniquely valuable for engineering radiative thermal transport in the near field. Here, by employing a rational design approach based on the electromagnetic local density of states, we demonstrate the ability of HMMs to substantially rectify radiative heat flow. Our idea is to establish a forward-biased scenario where the two HMM-based terminals of a thermal diode feature overlapped hyperbolic bands which result in a large heat current, and suppress the reverse heat flow by creating spectrally mismatched density of states as the temperature bias is flipped. As an example, we present a few high-performance thermal diodes by pairing HMMs made of polar dielectrics and metal-to-insulator transition (MIT) materials in the form of periodic nanowire arrays, and considering three representative kinds of substrates. Upon optimization, we theoretically achieve a rectification ratio of 324 at a 100 nm gap, which remains greater than 148 for larger gap sizes up to 1 um over a wide temperature range. The maximum rectification represents an almost 1000-fold increase compared to a bulk diode using the same materials, and is twice that of state-of-the-art designs. Our work highlights the potential of HMMs for rectifying radiative heat flow, and may find applications in advanced thermal management and energy conversion systems.
Taking advantage of phase-transition and reconfigurable metamaterials, dynamic control of nanoscale thermal modulation can be achieved through the near-field radiative thermal rectification devices. In this work, an active-tuning near-field thermal rectifier using reconfigurable phase-transition metamaterials is explored. The rectifier has two terminals separated by vacuum, working under a controllable operational temperature around the critical temperature of the phase-transition material VO2. One of the terminals is a stretchable structure made of PDMS thin film and grating consisting of various types of phase-transition material. The effects of various inclusion forms and all the related geometric parameters are well analyzed. The controllable nanoscale thermal modulation can be achieved and the ultrahigh rectification ratios of 23.7 and 19.8, the highest values ever predicted, can be obtained for two deformation scenarios, respectively. It will shed light on the dynamic tuning of small-scale thermal transport and light manipulation.
In this Letter we experimentally demonstrate that the radiative heat transfer between metallic planar surfaces exceeds the blackbody limit by employing the near-field and thin-film effects. Nanosized polystyrene particles were used to create a nanometer gap between aluminum thin-films of different thicknesses coated on 5x5 mm2 diced silicon chips while the gap spacing is fitted from the near-field measurement with bare Si chips. The experimental results are validated by theoretical calculation based on fluctuational electrodynamics. The near-field radiative heat flux between 13-nm Al thin-film samples at 215 nm gap distance is measured to be 6.4 times over the blackbody limit and 420 times compared to the far-field radiative heat transfer between metallic surfaces with a temperature difference of 65 K. In addition, the theoretical prediction suggests a near-field enhancement of 122 times relative to the blackbody limit and 8000 times over far-field one at 50-nm vacuum gap between 20-nm Al thin-film samples, under the same temperature difference of 65 K. This work will facilitate the understanding and application of near-field radiation to thermal power conversion, noncontact cooling, heat flow management, and optical storage where metallic materials are involved.
We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the exchange bias field is substantially enhanced because of a sharp increase in magnetocrystalline anisotropy constant from high-temperature cubic to lowtemperature monoclinic structure. Moreover, with respect to the Fe3O4 (40 nm)/MgO (001) thin film, the coercivity field of the CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) bilayer is greatly increased for all the temperature range, which would be due to the coupling between Co spins and Fe spins across the interface.
We study in this article how heat can be exchanged between two level systems (TLS) each of them being coupled to a thermal reservoir. Calculation are performed solving a master equation for the density matrix using the Born markov-approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimization.
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