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Register a new userTopological insulators in ordered double transition metals M$_2$M$$C$_2$ (M$$= Mo, W; M$$= Ti, Zr, Hf) MXenes
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The family of two-dimensional transition metal carbides, so called MXenes, has recently found new members with ordered double transition metals M$_2$M$$C$_2$, where M$$ and M$$ stand for transition metals. Here, using a set of first-principles calculations, we demonstrate that some of the newly added members, oxide M$_2$M$$C$_2$ (M$$= Mo, W; M$$= Ti, Zr, Hf) MXenes, are topological insulators. The nontrivial topological states of the predicted MXenes are revealed by the $Z_2$ index, which is evaluated from the parities of the occupied bands below the Fermi energy at time reversal invariant momenta, and also by the presence of the edge states. The predicted M$_2$M$$C$_2$O$_2$ MXenes show nontrivial gaps in the range of 0.041 -- 0.285 eV within the generalized gradient approximation and 0.119 -- 0.409 eV within the hybrid functional. The band gaps are induced by the spin-orbit coupling within the degenerate states with $d_{x^2-y^2}$ and $d_{xy}$ characters of M$$ and M$$, while the band inversion occurs at the $Gamma$ point among the degenerate $d_{x^2-y^2}$/$d_{xy}$ orbitals and a non-degenerate $d_{3z^2-r^2}$ orbital, which is driven by the hybridization of the neighboring orbitals. The phonon dispersion calculations find that the predicted topological insulators are structurally stable. The predicted W-based MXenes with large band gaps might be suitable candidates for many topological applications at room temperature. In addition, we study the electronic structures of thicker ordered double transition metals M$_2$M$_2$C$_3$O$_2$ (M$$= Mo, W; M$$= Ti, Zr, Hf) and find that they are nontrivial topological semimetals.
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Tuning the electronic and magnetic properties of a material through strain engineering is an effective strategy to enhance the performance of electronic and spintronic devices. Recently synthesized two-dimensional transition metal carbides M$_2$C (M=Hf, Nb, Sc, Ta, Ti, V, Zr), known as MXenes, has aroused increasingly attentions in nanoelectronic technology due to their unusual properties. In this paper, first-principles calculations based on density functional theory are carried out to investigate the electronic and magnetic properties of M$_2$C subjected to biaxial symmetric mechanical strains. At the strain-free state, all these MXenes exhibit no spontaneous magnetism except for Ti$_2$C and Zr$_2$C which show a magnetic moment of 1.92 and 1.25 $mu_B$/unit, respectively. As the tensile strain increases, the magnetic moments of MXenes are greatly enhanced and a transition from nonmagnetism to ferromagnetism is observed for those nonmagnetic MXenes at zero strains. The most distinct transition is found in Hf$_2$C, in which the magnetic moment is elevated to 1.5 $mu_B$/unit at a strain of 15%. We further show that the magnetic properties of Hf$_2$C are attributed to the band shift mainly composed of Hf(5$d$) states. This strain-tunable magnetism can be utilized to design future spintronics based on MXenes.
Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.
We performed comparable polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present work provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance (MR) in this class of materials.
In this review, we present a comprehensive overview of superconductivity in electron-doped metal nitride halides $M$N$X$ ($M$ = Ti, Zr, Hf; $X$ = Cl, Br, I) with layered crystal structure and two-dimensional electronic states. The parent compounds are band insulators with no discernible long-range ordered state. Upon doping tiny amount of electrons, superconductivity emerges with several anomalous features beyond the conventional electron-phonon mechanism, which stimulate theoretical investigations. We will discuss experimental and theoretical results reported thus far and compare the electron-doped layered nitride superconductors with other superconductors.
With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical flexibility, and precisely controlled growth, two-dimensional (2D) materials are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we comprehensively investigated the thermal conductivity of novel 2D layered MSi$_2$N$_4$ (M = Mo, W). Our results point to competitive thermal conductivities (162 W/mK) of monolayer MoSi$_2$N$_4$, which is around two times larger than that of WSi$_2$N$_4$ and seven times larger than that of silicene despite their similar non-planar structures. It is revealed that the high thermal conductivity arises mainly from its large group velocity and low anharmonicity. Our result suggests that MoSi$_2$N$_4$ could be a potential candidate for 2D thermal management materials.
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