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Register a new userRaman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)
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We performed comparable polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present work provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance (MR) in this class of materials.
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Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.
In recent years, transition metal dichalcogenides (TMDs) have garnered great interest as topological materials -- monolayers of centrosymmetric $beta$-phase TMDs have been identified as 2D topological insulators (TIs), and bulk crystals of noncentrosymmetric $gamma$-phase MoTe$_2$ and WTe$_2$ have been identified as type-II Weyl semimetals. However, ARPES and STM probes of these TMDs have revealed huge, arc-like surface states that overwhelm, and are sometimes mistaken for, the much smaller topological surface Fermi arcs of bulk type-II Weyl points. In this letter, we use first-principles calculations and (nested) Wilson loops to analyze the bulk and surface electronic structure of both $beta$- and $gamma$-MoTe$_2$, finding that $beta$-MoTe$_2$ ($gamma$-MoTe$_2$ gapped with symmetry-preserving distortion) is an inversion-symmetry-indicated $mathbb{Z}_{4}$-nontrivial ($noncentrosymmetric, non$-$symmetry$-$indicated$) higher-order TI (HOTI) driven by double band inversion. Both structural phases of MoTe$_2$ exhibit the same surface features as WTe$_2$, revealing that the large Fermi arcs are in fact not topologically trivial, but are rather the characteristic split and gapped fourfold surface states of a HOTI. We also show that, when the effects of SOC are neglected, $beta$-MoTe$_2$ is a nodal-line semimetal with $mathbb{Z}_{2}$-nontrivial monopole nodal lines (MNLSM). This finding confirms that MNLSMs driven by double band inversion are the weak-SOC limit of HOTIs, implying that MNLSMs are higher-order topological $semimetals$ with flat-band-like hinge states, which we find to originate from the corner modes of 2D fragile TIs.
Manipulating crystal structure and the corresponding electronic properties in topological quantum materials provides opportunities for the exploration of exotic physics and practical applications. As prototypical topological materials, the bulk MoTe2 and WTe2 are identified to be Weyl semimetals and higher-order topological insulators. The non-centrosymmetric interlayer stacking in MoTe2 and WTe2 causes the Weyl semimetal phase while the intralayer Peierls distortion causes the higher-order topological insulator phase. Here, by ultrafast electron diffraction and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in both the low temperature Td and room temperature 1T phase of MoTe2 and WTe2. The ultrafast reduction of the intralayer Peierls distortion within 0.3 ps is demonstrated to be driven by Mo-Mo (W-W) bond stretching and dissociation. Both the interlayer shear displacement and the suppression of the intralayer Peierls distortion are identified to be caused by photon excitation, which is a different mechanism compared to the THz field and optical field driven structural transitions reported previously. The revealed intralayer and interlayer structural transitions, provide an ultrafast switch from the rich topological nontrivial phases, such as the Weyl semimetal phase and (higher-order) topological insulator phase, to trivial phase in bulk MoTe2 and WTe2 and most monolayer TMDCs. Our work elucidates the pathway of the intralayer and interlayer structural transitions and the associated topological switches in atomic and femtosecond spatiotemporal scale, and sheds light on new opportunities for the ultrafast manipulation of topological and other exotic properties by photon excitation.
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here we review recent progress in our understanding of the excitonic properties in monolayer TMDs and lay out future challenges. We focus on the consequences of the strong direct and exchange Coulomb interaction, discuss exciton-light interaction and effects of other carriers and excitons on electron-hole pairs in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^prime$, and T$_d$ regions, as well as a two-phase 1T$^prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.
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