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Register a new userEnhancement of the thermoelectric properties in doped FeSb$_2$ bulk crystals
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Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $kappa$. Here we studied the influence of different chemical substitutions at Fe and Sb site on thermal conductivity and thermoelectric effect in high quality single crystals. At $5%$ of Te doping at Sb site thermal conductivity is suppressed from $sim 250$ W/Km in undoped sample to about 8 W/Km. However, Cr and Co doping at Fe site suppresses thermal conductivity more slowly than Te doping, and even at 20$%$ Cr/Co doping the thermal conductivity remains $sim 30$ W/Km. The analysis of different contributions to phonon scattering indicates that the giant suppression of $kappa$ with Te is due to the enhanced point defect scattering originating from the strain field fluctuations. In contrast, Te-doping has small influence on the correlation effects and then for small Te substitution the large magnitude of the Seebeck coefficient is still preserved, leading to the enhanced thermoelectric figure of merit ($ZTsim 0.05$ at $sim 100$ K) in Fe(Sb$_{0.9}$Te$_{0.1}$)$_2$.
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We report on the emergence of an Electronic Griffiths Phase (EGP) in the doped semiconductor FeSb$_{2}$, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition (MIT). Magnetic, transport, and thermodynamic measurements of Fe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The EGP states are found on the metallic boundary, between the insulating state ($x = 0$) and a long-range albeit weak magnetic order ($x geq 0.075$).
Thermoelectric properties of the system La$_2$NiO$_{4+delta}$ have been recently discussed [Phys. Rev. B 86, 165114 (2012)] via ab initio calculations. An optimum hole-doping value was obtained with reasonable thermopower and thermoelectric figure of merit being calculated. Here, a large increase in the thermoelectric performance through lattice strain and the corresponding atomic relaxations is predicted. This increase would be experimentally attainable via growth in thin films of the material on top of different substrates. A small tensile strain would produce large thermoelectric figures of merit at high temperatures, $zT$ $sim$ 1 in the range of oxygen excess $delta$ $sim$ 0.05 - 0.10 and in-plane lattice parameter in the range 3.95 - 4.05 AA. In that relatively wide range of parameters, thermopower values close to 200 $mu$V/K are obtained. The best performance of this compound is expected to occur in the high temperature limit.
Magnetoresistance (MR) of the Bi$_{2-x}$Pb$_x$Sr$_2$Co$_2$O$_y$ ($x$=0, 0.3, 0.4) single crystals is investigated systematically. A nonmonotonic variation of the isothermal in-plane and out-of-plane MR with the field is observed. The out-of-plane MR is positive in high temperatures and increases with decreasing $T$, and exhibits a pronounced hump, and changes the sign from positive to negative at a centain temperature. These results strongly suggest that the observed MR consists of two contributions: one emph{negative} and one emph{positive} component. The isothermal MR in high magnetic fields follows a $H^2$ law. While the negative contribution comes from spin scattering of carriers by localized-magnetic-moments based on the Khosla-Fischer model.
A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.
Combining LSDA+$U$ and an analysis of superexchange interactions beyond DFT, we describe the magnetic ground states in rutile and anatase Cr-doped TiO$_2$. In parallel, we correct our LSDA+$U$ ground state through GW corrections ($GW$@LSDA+$U$) that reproduce the position of impurity states and the band gaps in satisfying agreement with experiments. Because of the different topological coordinations of Cr-Cr bonds in the ground states of rutile and anatase, superexchange interactions induce either ferromagnetic or antiferromagnetic couplings of Cr ions. In Cr-doped anatase, this interaction leads to a new mechanism which stabilizes a ferromagnetic ground state, in keeping with experimental evidence, without the need to invoke F-center exchange.
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