No Arabic abstract
The improvement in the fabrication techniques of iron-based superconductors have made these materials real competitors of high temperature superconductors and MgB$_2$. In particular, iron-chalcogenides have proved to be the most promising for the realization of high current carrying tapes. But their use on a large scale cannot be achieved without the understanding of the current stability mechanisms in these compounds. Indeed, we have recently observed the presence of flux flow instabilities features in Fe(Se,Te) thin films grown on CaF$_2$. Here we present the results of current-voltage characterizations at different temperatures and applied magnetic fields on Fe(Se,Te) microbridges grown on CaF$_2$. These results will be analyzed from the point of view of the most validated models with the aim to identify the nature of the flux flow instabilities features (i.e., thermal or electronic), in order to give a further advance to the high current carrying capability of iron-chalcogenide superconductors.
The stability against quench is one of the main issue to be pursued in a superconducting material which should be able to perform at very high levels of current densities. Here we focus on the connection between the critical current $I_c$ and the quenching current $I^*$ associated to the so-called flux-flow instability phenomenon, which sets in as an abrupt transition from the flux flow state to the normal state. To this purpose, we analyze several current-voltage characteristics of three types of iron-based thin films, acquired at different temperature and applied magnetic field values. For these samples, we discuss the impact of a possible coexistence of intrinsic electronic mechanisms and extrinsic thermal effects on the quenching current dependence upon the applied magnetic field. The differences between the quenching current and the critical current are reported also in the case of predominant intrinsic mechanisms. Carrying out a comparison with high-temperature cuprate superconductors, we suggest which material can be the best trade-off between maximum operating temperature, higher upper critical field and stability under high current bias.
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.
The complex interdigitated phases have greatly frustrated attempts to document the basic features of the superconductivity in the alkali metal intercalated iron chalcogenides. Here, using elastic neutron scattering, energy-dispersive x-ray spectroscopy, and resistivity measurements, we elucidate the relations of these phases in Rb$_{1-delta}$Fe$_y$Se$_{2-z}$S$_z$. We find: i) the iron content is crucial in stabilizing the stripe antiferromagnetic (AF) phase with rhombic iron vacancy order ($yapprox1.5$), the block AF phase with $sqrt{5}times sqrt{5}$ iron vacancy order ($yapprox1.6$), and the iron vacancy-free phase ($yapprox2$); ii) the superconducting phase ($z=0$) evolves into a metallic phase ($z>1.5$) with sulfur substitution due to the progressive decrease of the electronic correlation strength. Both the stripe AF phase and the block AF phase are Mott insulators. Our data suggest that there are miscibility gaps between these three phases. The existence of the miscibility gaps in the iron content is the key to understanding the relationship between these complicated phases.
The structural and electronic properties of hypothetical Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters $a$ in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems are good candidates for new superconducting iron-based materials.
We present numerical solution of equations by Aslamazov and Lempitskiy (AL) for the distribution of the transport current density in thin superconducting films in the absence of external magnetic field, in both the Meissner and the vortex states. This solution describes smooth transition between the regimes of a wide film and a narrow channel and enables us to find the critical currents and current-voltage characteristics within a wide range of the film width and temperatures. We propose simple approximating formulas for the current density distributions and critical currents.