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Register a new userDephasing measurements in InGaAs/AlInAs heterostructures: manifestations of spin-orbit and Zeeman interactions
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We have measured weak antilocalization effects, universal conductance fluctuations, and Aharonov-Bohm oscillations in the two-dimensional electron gas formed in InGaAs/AlInAs heterostructures. This system possesses strong spin-orbit coupling and a high Land{e} factor. Phase-coherence lengths of 2$-$4 $mu$m at 1.5$-$4.2 K are extracted from the magnetoconductance measurements. The analysis of the coherence-sensitive data reveals that the temperature dependence of the decoherence rate complies with the dephasing mechanism originating from electron-electron interactions in all three experiments. Distinct beating patterns superimposed on the Aharonov-Bohm oscillations are observed over a wide range of magnetic fields, up to 0.7 Tesla at the relatively high temperature of 1.5 K. The possibility that these beats are due to the interplay between the Aharonov-Bohm phase and the Berry one, different for electrons of opposite spins in the presence of strong spin-orbit and Zeeman interactions in ring geometries, is carefully investigated. It appears that our data are not explained by this mechanism; rather, a few geometrically-different electronic paths within the rings width can account for the oscillations modulations.
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Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show for the first time an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single layer graphene encapsulated between the transition metal dichalcogenide WSe$_2$ and hBN is found to exhibit exceptional quality with mobilities as high as 100000 cm^2/V/s. At the same time clear weak anti-localization indicates strong spin-orbit coupling and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.
When an electron or hole is in a conduction band of a crystal, it can be very different from 2, depending upon the crystalline anisotropy and the direction of the applied magnetic induction ${bf B}$. In fact, it can even be 0! To demonstrate this quantitatively, the Dirac equation is extended for a relativistic electron or hole in an orthorhombically-anisotropic conduction band with effective masses $m_j$ for $j=1,2,3$ with geometric mean $m_g=(m_1m_2m_3)^{1/3}$. The appropriate Foldy-Wouthuysen transformations are extended to evaluate the non-relativistic Hamiltonian to $O({rm m}c^2)^{-4}$, where ${rm m}c^2$ is the particles Einstein rest energy. For ${bf B}||hat{bf e}_{mu}$, the Zeeman $g_{mu}$ factor is $2{rm m}sqrt{m_{mu}}/m_g^{3/2} + O({rm m}c^2)^{-2}$. While propagating in a two-dimensional (2D) conduction band with $m_3gg m_1,m_2$, $g_{||}<<2$, consistent with recent measurements of the temperature $T$ dependence of the parallel upper critical induction $B_{c2,||}(T)$ in superconducting monolayer NbSe$_2$ and in twisted bilayer graphene. While a particle is in its conduction band of an atomically thin one-dimensional metallic chain along $hat{bf e}_{mu}$, $g<<2$ for all ${bf B}={bf abla}times{bf A}$ directions and vanishingly small for ${bf B}||hat{bf e}_{mu}$. The quantum spin Hall Hamiltonian for 2D metals with $m_1=m_2=m_{||}$ is $K[{bf E}times({bf p}-q{bf A})]_{perp}sigma_{perp}+O({rm m}c^2)^{-4}$, where ${bf E}$ and ${bf p}-q{bf A}$ are the planar electric field and gauge-invariant momentum, $q=mp|e|$ is the particles charge, $sigma_{perp}$ is the Pauli matrix normal to the layer, $K=pmmu_B/(2m_{||}c^2)$, and $mu_B$ is the Bohr magneton.
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions in a sum rule approach. This solution allows to discuss the influence of the spin-orbit coupling on some relevant quantities that have been measured in inelastic light scattering and electron-spin resonance experiments on quantum wells. In particular, we have evaluated the spin-orbit contribution to the spin splitting of the Landau levels and to the splitting of charge- and spin-density excitations. We also discuss how the spin-orbit effects change if the applied magnetic field is tilted with respect to the direction perpendicular to the quantum well.
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the SOI is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients $alpha$ of 2$times$10$^{-12}$ eVm is estimated.
We report the discovery of electric-field-induced transition from a topologically trivial to a topologically nontrivial band structure in an atomically sharp heterostructure of bilayer graphene (BLG) and single-layer WSe2 per the theoretical predictions of Gmitra and Fabian [Phys. Rev. Lett. 119, 146401 (2017)]. Through detailed studies of the quantum correction to the conductance in the BLG, we establish that the band-structure evolution arises from an interplay between proximity-induced strong spin-orbit interaction (SOI) and the layer polarizability in BLG. The low-energy carriers in the BLG experience an effective valley Zeeman SOI that is completely gate tunable to the extent that it can be switched on or off by applying a transverse displacement field or can be controllably transferred between the valence and the conduction band. We demonstrate that this results in the evolution from weak localization to weak antilocalization at a constant electronic density as the net displacement field is tuned from a positive to a negative value with a concomitant SOI-induced splitting of the low-energy bands of the BLG near the K (K) valley, which is a unique signature of the theoretically predicted spin-orbit valve effect. Our analysis shows that quantum correction to the Drude conductance in Dirac materials with strong induced SOI can only be explained satisfactorily by a theory that accounts for the SOI-induced spin splitting of the BLG low-energy bands. Our results demonstrate the potential for achieving highly tunable devices based on the valley Zeeman effect in dual-gated two-dimensional materials.
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