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Register a new userElectric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect
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We report the discovery of electric-field-induced transition from a topologically trivial to a topologically nontrivial band structure in an atomically sharp heterostructure of bilayer graphene (BLG) and single-layer WSe2 per the theoretical predictions of Gmitra and Fabian [Phys. Rev. Lett. 119, 146401 (2017)]. Through detailed studies of the quantum correction to the conductance in the BLG, we establish that the band-structure evolution arises from an interplay between proximity-induced strong spin-orbit interaction (SOI) and the layer polarizability in BLG. The low-energy carriers in the BLG experience an effective valley Zeeman SOI that is completely gate tunable to the extent that it can be switched on or off by applying a transverse displacement field or can be controllably transferred between the valence and the conduction band. We demonstrate that this results in the evolution from weak localization to weak antilocalization at a constant electronic density as the net displacement field is tuned from a positive to a negative value with a concomitant SOI-induced splitting of the low-energy bands of the BLG near the K (K) valley, which is a unique signature of the theoretically predicted spin-orbit valve effect. Our analysis shows that quantum correction to the Drude conductance in Dirac materials with strong induced SOI can only be explained satisfactorily by a theory that accounts for the SOI-induced spin splitting of the BLG low-energy bands. Our results demonstrate the potential for achieving highly tunable devices based on the valley Zeeman effect in dual-gated two-dimensional materials.
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Spin-orbit coupling in graphene can be increased far beyond its intrinsic value by proximity coupling to a transition metal dichalcogenide. In bilayer graphene, this effect was predicted to depend on the occupancy of both graphene layers, rendering it gate-tunable by an out-of-plane electric field. We experimentally confirm this prediction by studying magnetotransport in a dual-gated WSe$_2$/bilayer graphene heterostructure. Weak antilocalization, which is characteristic for phase-coherent transport in diffusive samples with spin-orbit interaction, can be strongly enhanced or suppressed at constant carrier density, depending on the polarity of the electric field. From the spin-orbit scattering times extracted from the fits, we calculate the corresponding Rashba and intrinsic spin-orbit parameters. They show a strong dependence on the transverse electric field, which is well described by a gate-dependent layer polarization of bilayer graphene.
We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity induced SOC energy scale. The Ising SOC is ~ 2.2 meV, 100 times higher than the intrinsic SOC in graphene, while its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ~15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe2 heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures.
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient as well as the external bias. In a broad temperature range, the pure valley current is found to be linearly dependent on the temperature gradient while it increases with the increasing temperature of one lead for a fixed thermal gradient. A valley field effect transistor (FET) driven by the temperature gradient is proposed that can turn on and off the pure valley current by gate voltage. The threshold gate voltage and on valley current are proportional to the temperature gradient. When the system switches on at positive gate voltage, the pure valley current is nearly independent of gate voltage. The valley transconductance is up to 30 {mu}S if we take Ampere as the unit of the valley current. This valley FET may find potential application in future valleytronics and valley caloritronics.
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show for the first time an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single layer graphene encapsulated between the transition metal dichalcogenide WSe$_2$ and hBN is found to exhibit exceptional quality with mobilities as high as 100000 cm^2/V/s. At the same time clear weak anti-localization indicates strong spin-orbit coupling and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable valley-topological transport. Here, we used a perpendicular gate electric field to break the inversion symmetry in BLG, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge contemporary understanding of topological transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.
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