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Engineering Long-Lived Collective Dark States in Spin Ensembles

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 Added by Stefan Putz
 Publication date 2015
  fields Physics
and research's language is English




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Ensembles of electron spins in hybrid microwave systems are powerful and versatile components for future quantum technologies. Quantum memories with high storage capacities are one such example which require long-lived states that can be addressed and manipulated coherently within the inhomogeneously broadened ensemble. This broadening is essential for true multimode memories, but induces a considerable spin dephasing and together with dissipation from a cavity interface poses a constraint on the memorys storage time. In this work we show how to overcome both of these limitations through the engineering of long-lived dark states in an ensemble of electron spins hosted by nitrogen-vacancy centres in diamond. By burning narrow spectral holes into a spin ensemble strongly coupled to a superconducting microwave cavity, we observe long-lived Rabi oscillations with high visibility and a decay rate that is a factor of forty smaller than the spin ensemble linewidth and thereby a factor of more than three below the pure cavity dissipation rate. This significant reduction lives up to the promise of hybrid devices to perform better than their individual subcomponents. To demonstrate the potential of our approach we realise the first step towards a solid-state microwave spin multiplexer by engineering multiple long-lived dark states. Our results show that we can fully access the decoherence free subspace in our experiment and selectively prepare protected states by spectral hole burning. This technique opens up the way for truly long-lived quantum memories, solid-state microwave frequency combs, optical to microwave quantum transducers and spin squeezed states. Our approach also paves the way for a new class of cavity QED experiments with dense spin ensembles, where dipole spin-spin interactions become important and many-body phenomena will be directly accessible on a chip.



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