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Register a new userExact magnetic field control of nitrogen-vacancy center spin for realizing fast quantum logic gates
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The negatively charged nitrogen-vacancy (NV) center spin in diamond can be used to realize quantum computation and to sense magnetic fields. Its spin triplet consists of three levels labeled with its spin z-components of +1, 0, and -1. Without external field, the +1 and -1 states are degenerate and higher than the 0 state due to the zero-field splitting. By taking the symmetrical and anti-symmetrical superpositions of the +1 and -1 states as our qubit basis, we obtain exact evolution operator of the NV center spin under time-dependent magnetic field by mapping the three-level system on time-dependent quantum two-level systems with exact analytical solutions. With our exact evolution operator of the NV center spin including three levels, we show that arbitrary qubits can be prepared from the starting 0 state and arbitrary rapid quantum logic gates of these qubits can be realized with magnetic fields. In addition, it is made clear that the typical quantum logic gates can be accomplished within a few nanoseconds and the fidelity can be very high because only magnetic field strength needs to be controlled in this approach. These results should be useful to realizing quantum computing with the NV center spin systems in diamond and exploring other effects and applications.
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Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 {mu}s. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.
The electrical conductivity of a material can feature subtle, nontrivial, and spatially-varying signatures with critical insight into the materials underlying physics. Here we demonstrate a conductivity imaging technique based on the atom-sized nitrogen-vacancy (NV) defect in diamond that offers local, quantitative, and noninvasive conductivity imaging with nanoscale spatial resolution. We monitor the spin relaxation rate of a single NV center in a scanning probe geometry to quantitatively image the magnetic fluctuations produced by thermal electron motion in nanopatterned metallic conductors. We achieve 40-nm scale spatial resolution of the conductivity and realize a 25-fold increase in imaging speed by implementing spin-to-charge conversion readout of a shallow NV center. NV-based conductivity imaging can probe condensed-matter systems in a new regime, and as a model example, we project readily achievable imaging of nanoscale phase separation in complex oxides.
We present an experimental and theoretical study of electronic spin decoherence in ensembles of nitrogen-vacancy (NV) color centers in bulk high-purity diamond at room temperature. Under appropriate conditions, we find ensemble NV spin coherence times (T_2) comparable to that of single NVs, with T_2 > 600 microseconds for a sample with natural abundance of 13C and paramagnetic impurity density ~10^15 cm^(-3). We also observe a sharp decrease of the coherence time with misalignment of the static magnetic field relative to the NV electronic spin axis, consistent with theoretical modeling of NV coupling to a 13C nuclear spin bath. The long coherence times and increased signal-to-noise provided by room-temperature NV ensembles will aid many applications of NV centers in precision magnetometry and quantum information.
The nitrogen-vacancy (NV) centre in diamond is a unique optical defect that is used in many applications today and methods to enhance its fluorescence brightness are highly sought after. We observed experimentally an enhancement of the NV quantum yield by up to 7% in bulk diamond caused by an external magnetic field relative to the field-free case. This observation is rationalised phenomenologically in terms of a magnetic field dependence of the NV excited state triplet-to-singlet transition rate. The theoretical model is in good qualitative agreement with the experimental results at low excitation intensities. Our results significantly contribute to our fundamental understanding of the photophysical properties of the NV defect in diamond and may enable novel NV centre-based magnetometry techniques.
We discuss multipulse magnetometry that exploits all three magnetic sublevels of the S=1 nitrogen-vacancy center in diamond to achieve enhanced magnetic field sensitivity. Based on dual frequency microwave pulsing, the scheme works in arbitrary magnetic bias fields and is twice as sensitive to ac magnetic fields as conventional two-level magnetometry. We derive the spin evolution operator for dual frequency microwave excitation and show its effectiveness for double-quantum state swaps. Using multipulse sequences of up to 128 pulses under optimized conditions, we show enhancement of the SNR by up to a factor of 2 in detecting NMR statistical signals, with a 4 times enhancement theoretically possible.
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