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Register a new userCoherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
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Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 {mu}s. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.
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Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.
Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin coherent property at high temperature. Here, we experimentally demonstrate coherent control of divacancy defect spins in silicon carbide above 550 K. The spin properties of defects ranging from room temperature to 600 K are investigated, in which the zero-field-splitting is found to have a polynomial temperature dependence and the spin coherence time decreases as the temperature increases. Moreover, as an example of application, we demonstrate a thermal sensing using the Ramsey method at about 450 K. Our experimental results would be useful for the investigation of high temperature properties of defect spins and silicon carbide-based broad-temperature range quantum sensing.
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $pm$1 and $pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 $mu$s at low fields to 80 $mu$s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is well-described by a theoretical model.
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