Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOptical nanoscopy of transient states in condensed matter
71
0
0.0
(
0
)
Added by
Frederik Kuschewski
Publication date
2015
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that allow for distinguishing between different contributions to these processes are hence urgently required. In this paper we demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) as a novel type of nano-probe for tracking transient states of matter. We introduce a sideband-demodulation technique that allows for probing exclusively the stimuli-induced change of near-field optical properties. We exemplify this development by inspecting the decay of an electron-hole plasma generated in SiGe thin films through near-infrared laser pulses. Our approach can universally be applied to optically track ultrafast/-slow processes over the whole spectral range from UV to THz frequencies.
rate research
Read More
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to decoherence. Here, we use terahertz Scanning Near-field Optical Microscopy (SNOM) to probe the local dielectric properties and carrier concentrations of wet-etched aluminum resonators on silicon, one of the most characteristic components of the superconducting quantum processors. Using a recently developed vector calibration technique, we extract the THz permittivity from spectroscopy in proximity to the microwave feedline. Fitting the extracted permittivity to the Drude model, we find that silicon in the etched channel has a carrier concentration greater than buffer oxide etched silicon and we explore post-processing methods to reduce the carrier concentrations. Our results show that near-field THz investigations can be applied to quantitatively evaluate and identify potential loss channels in quantum devices.
Intense electromagnetic evanescent fields are thermally excited in near fields on material surfaces (at distances smaller than the wavelength of peak thermal radiation). The property of the fields is of strong interest for it is material-specific and is important for understanding a variety of surface-related effects, such as friction forces, Casimir forces, near-field heat transfer, and surface-coupled molecular dynamics. On metal surfaces, relevance of surface plasmon polaritons (SPlPs), coupled to collective motion of conduction electrons, has attracted strong interest, but has not been explicitly clarified up to the present time. Here, using a passive terahertz (THz) near-field microscope with unprecedented high sensitivity, we unveil detailed nature of thermally generated evanescent fields (wavelength:lamda0~14.5micron) on metals at room temperature. Our experimental results unambiguously indicate that the thermal waves are short-wavelength fluctuating electromagnetic fields, from which relevance of SPlPs is ruled out.
Skyrmions were originally introduced in Particle Physics as a possible mechanism to explain the stability of particles. Lately the concept has been applied in Condensed Matter Physics to describe the newly discovered topologically protected magnetic configurations called the magnetic Skyrmions. This elementary review introduces the concept at a level suitable for beginning students of Physics.
We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance the near-field interaction with mid-IR surface phonons of SiO2 substrate. Our data augmented by detailed modeling establish graphene as a new medium supporting plasmonic effects that can be controlled by gate voltage.
We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
