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Optical valleytronics of impurity states in two-dimensional Dirac materials

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 Added by Dogyun Ko
 Publication date 2020
  fields Physics
and research's language is English




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We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.



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Two-dimensional (2D) massive Dirac electrons possess a finite Berry curvature, with Chern number $pm 1/2$, that entails both a quantized dc Hall response and a subgap full-quarter Kerr rotation. The observation of these effects in 2D massive Dirac materials such as gapped graphene, hexagonal boron nitride or transition metal dichalcogenides (TMDs) is obscured by the fact that Dirac cones come in pairs with opposite sign Berry curvatures, leading to a vanishing Chern number. Here, we show that the presence of spin-orbit interactions, combined with an exchange spin splitting induced either by diluted magnetic impurities or by proximity to a ferromagnetic insulator, gives origin to a net magneto-optical Kerr effect in such systems. We focus on the case of TMD monolayers and study the dependence of Kerr rotation on frequency and exchange spin splitting. The role of the substrate is included in the theory and found to critically affect the results. Our calculations indicate that state-of-the-art magneto-optical Kerr spectroscopy can detect a single magnetic impurity in diluted magnetic TMDs.
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