Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userEnergy-tunable entangled photon sources on a III-V/Silicon chip
149
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Many of the envisioned quantum photonic technologies, e.g. a quantum repeater, rely on an energy- (wavelength-) tunable source of polarization entangled photon pairs. The energy tunability is a fundamental requirement to perform two-photon-interference between different sources and to swap the entanglement. Parametric-down-conversion and four-wave-mixing sources of entangled photons have shown energy tunability, however the probabilistic nature of the sources limits their applications in complex quantum protocols. Here we report a silicon-based hybrid photonic chip where energy-tunable polarization entangled photons are generated by deterministic and scalable III-V quantum light sources. This device is based on a micro-electromechanical system (MEMS) incorporating InAs/GaAs quantum dots (QDs) on a PMNPT-on-silicon substrate. The entangled photon emissions from single QDs can be tuned by more than 3000 times of the radiative linewidth without spoiling the entanglement. With a footprint of several hundred microns, our design facilitates the miniaturization and scalable integration of indistinguishable entangled photon sources on silicon. When interfaced with silicon-based quantum photonic circuits, this device will offer a vast range of exciting possibilities.
rate research
Read More
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation $g^{(2)}_{rm her}(0)=0.10 pm 0.02$ that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.
We report on the development of on-chip microcavities and show their potential as a platform for cavity quantum electrodynamics experiments. Microcavity arrays were formed by the controlled buckling of SiO2/Ta2O5 Bragg mirrors, and exhibit a reflectance-limited finesse of 3500 and mode volumes as small as 35lambda^3. We show that the cavity resonance can be thermally tuned into alignment with the D2 transition of 87Rb, and outline two methods for providing atom access to the cavity. Owing to their small mode volume and high finesse, these cavities exhibit single-atom cooperativities as high as C1 = 65. A unique feature of the buckled-dome architecture is that the strong-coupling parameter g0/kappa is nearly independent of the cavity size. Furthermore, strong coupling should be achievable with only modest improvements in mirror reflectance, suggesting that these monolithic devices could provide a robust and scalable solution to the engineering of light-matter interfaces.
Large-scale integrated quantum photonic technologies will require the on-chip integration of identical photon sources with reconfigurable waveguide circuits. Relatively complex quantum circuits have already been demonstrated, but few studies acknowledge the pressing need to integrate photon sources and waveguide circuits together on-chip. A key step towards such large-scale quantum technologies is the integration of just two individual photon sources within a waveguide circuit, and the demonstration of high-visibility quantum interference between them. Here, we report a silicon-on-insulator device combining two four-wave mixing sources, in an interferometer with a reconfigurable phase shifter. We configure the device to create and manipulate two-colour (non-degenerate) or same-colour (degenerate), path-entangled or path-unentangled photon pairs. We observe up to 100.0+/-0.4% visibility quantum interference on-chip, and up to 95+/-4% off-chip. Our device removes the need for external photon sources, provides a path to increasing the complexity of quantum photonic circuits, and is a first step towards fully-integrated quantum technologies.
Quantum fluctuations give rise to van der Waals and Casimir forces that dominate the interaction between electrically neutral objects at sub-micron separations. Under the trend of miniaturization, such quantum electrodynamical effects are expected to play an important role in micro- and nano-mechanical devices. Nevertheless, utilization of Casimir forces on the chip level remains a major challenge because all experiments so far require an external object to be manually positioned close to the mechanical element. Here, by integrating a force-sensing micromechanical beam and an electrostatic actuator on a single chip, we demonstrate the Casimir effect between two micromachined silicon components on the same substrate. A high degree of parallelism between the two near-planar interacting surfaces can be achieved because they are defined in a single lithographic step. Apart from providing a compact platform for Casimir force measurements, this scheme also opens the possibility of tailoring the Casimir force using lithographically defined components of non-conventional shapes.
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Gamma$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
