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This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few differe
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CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.
The innermost part of the ATLAS experiment will be a pixel detector containing around 1750 individual detector modules. A detector control system (DCS) is required to handle thousands of I/O channels with varying characteristics. The main building blocks of the pixel DCS are the cooling system, the power supplies and the thermal interlock system, responsible for the ultimate safety of the pixel sensors. The ATLAS Embedded Local Monitor Board (ELMB), a multi purpose front end I/O system with a CAN interface, is foreseen for several monitoring and control tasks. The Supervisory, Control And Data Acquisition (SCADA) system will use PVSS, a commercial software product chosen for the CERN LHC experiments. We report on the status of the different building blocks of the ATLAS pixel DCS.
A pixel detector with high spatial resolution and temporal information for ultra-cold neutrons is developed based on a commercial CCD on which a neutron converter is attached. 10B and 6Li are tested for the neutron converter and 10B is found to be more suitable based on efficiency and spatial resolution. The pixel detector has an efficiency of 44.1 +- 1.1% and a spatial resolution of 2.9 +- 0.1 um (1 sigma).
The PiXeL detector (PXL) for the Heavy Flavor Tracker (HFT) of the STAR experiment at RHIC is the first application of the state-of-the-art thin Monolithic Active Pixel Sensors (MAPS) technology in a collider environment. Custom built pixel sensors, their readout electronics and the detector mechanical structure are described in detail. Selected detector design aspects and production steps are presented. The detector operations during the three years of data taking (2014-2016) and the overall performance exceeding the design specifications are discussed in the conclusive sections of this paper.
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.
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