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Register a new userTemperature-driven transition from a semiconductor to a topological insulator
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We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.
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Random flux is commonly believed to be incapable of driving metal-insulator transitions. Surprisingly, we show that random flux can after all induce a metal-insulator transition in the two-dimensional Su-Schrieffer-Heeger model, thus reporting the first example of such a transition. Remarkably, we find that the resulting insulating phase can even be a higher-order topological insulator with zero-energy corner modes and fractional corner charges, rather than a conventional Anderson insulator. Employing both level statistics and finite-size scaling analysis, we characterize the metal-insulator transition and numerically extract its critical exponent as $ u=2.48pm0.08$. To reveal the physical mechanism underlying the transition, we present an effective band structure picture based on the random flux averaged Greens function.
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.
It is well-known that helical surface states of a three-dimensional topological insulator (TI) do not respond to a static in-plane magnetic field. Formally this occurs because the in-plane magnetic field appears as a vector potential in the Dirac Hamiltonian of the surface states and can thus be removed by a gauge transformation of the surface electron wavefunctions. Here we show that when the top and bottom surfaces of a thin film of TI are hybridized and the Fermi level is in the hybridization gap, a nonzero diamagnetic response appears. Moreover, a quantum phase transition occurs at a finite critical value of the parallel field from an insulator with a diamagnetic response to a semimetal with a vanishing response to the parallel field.
The Su-Schrieffer-Heeger model of polyacetylene is a paradigmatic Hamiltonian exhibiting non-trivial edge states. By using Floquet theory we study how the spectrum of this one-dimensional topological insulator is affected by a time-dependent potential. In particular, we evidence the competition among different photon-assisted processes and the native topology of the unperturbed Hamiltonian to settle the resulting topology at different driving frequencies. While some regions of the quasienergy spectrum develop new gaps hosting Floquet edge states, the native gap can be dramatically reduced and the original edge states may be destroyed or replaced by new Floquet edge states. Our study is complemented by an analysis of Zak phase applied to the Floquet bands. Besides serving as a simple example for understanding the physics of driven topological phases, our results could find a promising test-ground in cold matter experiments.
The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit interaction or the crystal lattice via odd number of band
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