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Register a new userRandom Flux Driven Metal to Higher-Order Topological Insulator Transition
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Random flux is commonly believed to be incapable of driving metal-insulator transitions. Surprisingly, we show that random flux can after all induce a metal-insulator transition in the two-dimensional Su-Schrieffer-Heeger model, thus reporting the first example of such a transition. Remarkably, we find that the resulting insulating phase can even be a higher-order topological insulator with zero-energy corner modes and fractional corner charges, rather than a conventional Anderson insulator. Employing both level statistics and finite-size scaling analysis, we characterize the metal-insulator transition and numerically extract its critical exponent as $ u=2.48pm0.08$. To reveal the physical mechanism underlying the transition, we present an effective band structure picture based on the random flux averaged Greens function.
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Floquet higher order topological insulators (FHOTIs) are a novel topological phase that can occur in periodically driven lattices. An appropriate experimental platform to realize FHOTIs has not yet been identified. We introduce a periodically-driven bipartite (two-band) system that hosts FHOTI phases, and predict that this lattice can be realized in experimentally-realistic optical waveguide arrays, similar to those previously used to study anomalous Floquet insulators. The model exhibits interesting phase transitions from first-order to second-order topological matter by tuning a coupling strength parameter, without breaking lattice symmetry. In the FHOTI phase, the lattice hosts corner modes at eigenphase $0$ or $pi$, which are robust against disorder in the individual couplings.
We theoretically investigate a periodically driven semimetal based on a square lattice. The possibility of engineering both Floquet Topological Insulator featuring Floquet edge states and Floquet higher order topological insulating phase, accommodating topological corner modes has been demonstrated starting from the semimetal phase, based on Floquet Hamiltonian picture. Topological phase transition takes place in the bulk quasi-energy spectrum with the variation of the drive amplitude where Chern number changes sign from $+1$ to $-1$. This can be attributed to broken time-reversal invariance ($mathcal{T}$) due to circularly polarized light. When the discrete four-fold rotational symmetry ($mathcal{C}_4$) is also broken by adding a Wilson mass term along with broken $mathcal{T}$, higher order topological insulator (HOTI), hosting in-gap modes at all the corners, can be realized. The Floquet quadrupolar moment, calculated with the Floquet states, exhibits a quantized value of $ 0.5$ (modulo 1) identifying the HOTI phase. We also show the emergence of the {it{dressed corner modes}} at quasi-energy $omega/2$ (remnants of zero modes in the quasi-static high frequency limit), where $omega$ is the driving frequency, in the intermediate frequency regime.
One of the hallmarks of bulk topology is the existence of robust boundary localized states. For instance, a conventional $d$ dimensional topological system hosts $d{-}1$ dimensional surface modes, which are protected by non-spatial symmetries. Recently, this idea has been extended to higher order topological phases with boundary modes that are localized in lower dimensions such as in the corners or in one dimensional hinges of the system. In this work, we demonstrate that a higher order topological phase can be engineered in a nonequilibrium state when the time-independent model does not possess any symmetry protected topological states. The higher order topology is protected by an emerging chiral symmetry, which is generated through the Floquet driving. Using both the exact numerical method and an effective high-frequency Hamiltonian obtained from the Brillouin-Wigner perturbation theory, we verify the emerging topological phase on a $pi$-flux square lattice. We show that the localized corner modes in our model are robust against a chiral symmetry preserving perturbation and can be classified as `extrinsic higher order topological phase. Finally, we identify a two dimensional topological invariant from the winding number of the corresponding sublattice symmetric one dimensional model. The latter model belongs to class AIII of ten-fold symmetry classification of topological matter.
Higher-order topological insulators are newly proposed topological phases of matter, whose bulk topology manifests as localized modes at two- or higher-dimensional lower boundaries. In this work, we propose the twisted bilayer graphenes with large angles as higher-order topological insulators, hosting topological corner charges. At large commensurate angles, the intervalley scattering opens up the bulk gap and the corner states occur at half filling. Based on both first-principles calculations and analytic analysis, we show the striking results that the emergence of the corner states do not depend on the choice of the specific angles as long as the underlying symmetries are intact. Our results show that the twisted bilayer graphene can serve as a robust candidate material of two-dimensional higher-order topological insulator.
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.
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