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Quasiparticle effective temperature in superconducting thin films illuminated at THz frequencies

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 Added by Tejas Guruswamy
 Publication date 2015
  fields Physics
and research's language is English




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The response of superconducting pair-breaking detectors is dependent on the details of the quasiparticle distribution. In Kinetic Inductance Detectors (KIDs), where both pair breaking and non-pair breaking photons are absorbed simultaneously, calculating the detector response therefore requires knowledge of the often nonequilibrium distributions. The quasiparticle effective temperature provides a good approximation to these nonequilibrium distributions. We compare an analytical expression relating absorbed power and the quasiparticle effective temperature in superconducting thin films to full solutions for the nonequilibrium distributions, and find good agreement for a range of materials, absorbed powers, photon frequencies and temperatures typical of KIDs. This analytical expression allows inclusion of nonequilibrium effects in device models without solving for the detailed distributions. We also show our calculations of the frequency dependence of the detector response are in agreement with recent experimental measurements of the response of Ta KIDs at THz frequencies.



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We report on terahertz frequency-domain spectroscopy (THz-FDS) experiments in which we measure charge carrier dynamics and excitations of thin-film superconducting systems at low temperatures in the THz spectral range. The characteristics of the set-up and the experimental procedures are described comprehensively. We discuss the single-particle density of states and a theory of electrodynamic absorption and optical conductivity of conventional superconductors. We present the experimental performance of the setup at low temperatures for a broad spectral range from 0.1 - 1.1 THz by the example of ultra-thin films of weakly disordered superconductors niobium nitride (NbN) and tantalum nitride (TaN) with different values of critical temperatures. Furthermore, we analyze and interpret our experimental data within the framework of conventional Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity.
Thin-film superconductors with thickness 30 to 500 nm are used as non-equilibrium quantum detectors for photons, phonons or more exotic particles. One of the most basic questions in determining their limiting sensitivity is the efficiency with which the quanta of interest couple to the detected quasiparticles. As low temperature superconducting resonators, thin-films are attractive candidates for producing quantum-sensitive arrayable sensors and the readout uses an additional microwave probe. We have calculated the quasiparticle generation efficiency eta_s for low energy photons in a representative, clean thin-film superconductor (Al) operating well-below its superconductingtransition temperature as a function of film thickness, within the framework of the coupled kineticequations described by Chang and Scalapino.[J. J. Chang and D. J. Scalapino, J. Low Temp. Phys. 31, 1 (1978)]. We have also included the effect of a lower frequency probe. We show that phonon loss from the thin-film reduces eta_s by as much as 40% compared to earlier models that considered relatively thick films or infinite volumes. We also show that the presence of the probe and signal enhances the generation efficiency slightly. We conclude that the ultimate limiting noise equivalent power of this class of detector is determined by the thin-film geometry.
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The microwave properties of polycrystalline MgB2 thin films prepared by the so-called in-situ method are investigated. The characterization of the films at microwave frequencies was obtained by a coplanar resonator technique. The analysis of the experimental data results in the determination of penetration depth, surface impedance and complex conductivity. The aim of this work is to set the experimental results in a consistent framework, involving the two-band model in the presence of impurity scattering. The energy gaps are calculated and the contribution of intra- and inter-band scattering is considered. From the comparison between the calculated gap values and the experimental data it turns out that the temperature dependence of the penetration depth can be accounted for by an effective mean energy gap, in agreement with the predictions of Kogan et al. [Phys. Rev. B 69, 132506 (2004)]. On the other hand, the temperature dependence of the real part of the microwave conductivity and of the surface resistance is accounted for by the single smaller gap, in agreement with the work of Jin et al. [Phys. Rev. Lett. 91, 127006 (2003)]. Since these findings rely on the same calculated gap structure, the required consistency is fulfilled.
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