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Register a new userDirect spectroscopic observation of a shallow hydrogen-like donor state in insulating SrTiO$_{3}$
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We present a direct spectroscopic observation of a shallow hydrogen-like muonium state in SrTiO$_3$ which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below $sim 70$ K. From the temperature dependence we estimate an activation energy of $sim 50$ meV in the bulk and $sim 23$ meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO$_3$. The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO$_{3}$-based oxide interface systems.
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The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($mu^+ + e^-$) center at the tetrahedral As site can capture the tracks holes and therefore behaves like a donor.
The hyperfine structure of the interstitial muonium (Mu) center in rutile (TiO$_2$, weakly $n$-type) has been identified by means of muon spin rotation technique. The angle-resolved hyperfine parameter has a tetragonal anisotropy within the $ab$ plane and axial anisotropy along the $c$ axis, strongly suggesting that Mu simulates the known local structure of interstitial hydrogen (H) located at an off-center position within a channel along $c$ axis, and the electron wave function bound to Mu is highly delocalized (~1.5 nm along $c$ axis, ~0.8 nm for $a$ axis). The ionization energy of Mu ($rightarrow mu^+ + e^-$) due to thermal activation is deduced to be 1.2(4) meV, as is directly inferred from the disappearance of Mu signal above ~8 K. These observations suggest that electronic level associated with Mu (as well as H) is situated near the bottom of the conduction band, serving as a shallow donor state in rutile.
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.
There are two prerequisites for understanding high-temperature (high-T$_c$) superconductivity: identifying the pairing interaction and a correct description of the normal state from which superconductivity emerges. The nature of the normal state of iron-pnictide superconductors, and the role played by correlations arising from partially screened interactions, are still under debate. Here we show that the normal state of carefully annealed electron-doped BaFe$_{2-x}$Co$_{x}$As$_2$ at low temperatures has all the hallmark properties of a local Fermi liquid, with a more incoherent state emerging at elevated temperatures, an identification made possible using bulk-sensitive optical spectroscopy with high frequency and temperature resolution. The frequency dependent scattering rate extracted from the optical conductivity deviates from the expected scaling $M_{2}(omega,T)propto(hbaromega)^{2}+(ppi k_{B}T)^{2}$ with $papprox$ 1.47 rather than $p$ = 2, indicative of the presence of residual elastic resonant scattering. Excellent agreement between the experimental results and theoretical modeling allows us to extract the characteristic Fermi liquid scale $T_{0}approx$ 1700 K. Our results show that the electron-doped iron-pnictides should be regarded as weakly correlated Fermi liquids with a weak mass enhancement resulting from residual electron-electron scattering from thermally excited quasi-particles.
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating. Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO$_3$ crystals with TiO$_2$ or mixed SrO/TiO$_2$ terminations show similar SPV spectra and transients as do LaAlO$_3$-covered samples with the respective termination of the SrTiO$_3$ substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO$_3$ and the minor role of LaAlO$_3$ with respect to the electronic interface properties.
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