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Register a new userElectronic structure of shallow donor state associated with muonium in rutile TiO$_2$
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The hyperfine structure of the interstitial muonium (Mu) center in rutile (TiO$_2$, weakly $n$-type) has been identified by means of muon spin rotation technique. The angle-resolved hyperfine parameter has a tetragonal anisotropy within the $ab$ plane and axial anisotropy along the $c$ axis, strongly suggesting that Mu simulates the known local structure of interstitial hydrogen (H) located at an off-center position within a channel along $c$ axis, and the electron wave function bound to Mu is highly delocalized (~1.5 nm along $c$ axis, ~0.8 nm for $a$ axis). The ionization energy of Mu ($rightarrow mu^+ + e^-$) due to thermal activation is deduced to be 1.2(4) meV, as is directly inferred from the disappearance of Mu signal above ~8 K. These observations suggest that electronic level associated with Mu (as well as H) is situated near the bottom of the conduction band, serving as a shallow donor state in rutile.
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The hyperfine structure of the interstitial muonium (Mu) in rutile (TiO$_2$, weakly $n$-type) has been identified by means of a muon spin rotation technique. The angle-resolved hyperfine parameters exhibit a tetragonal anisotropy within the $ab$ plane and axial anisotropy with respect to the $langle 001rangle$ ($hat{c}$) axis. This strongly suggests that the Mu is bound to O (forming an OH bond) at an off-center site within a channel along the $hat{c}$ axis, while the unpaired Mu electron is localized around the neighboring Ti site. The hyperfine parameters are quantitatively explained by a model that considers spin polarization of the unpaired electron at both the Ti and O sites, providing evidence for the formation of Mu as a Ti-O-Mu complex paramagnetic state. The disappearance of the Mu signal above $sim$10 K suggests that the energy necessary for the promotion of the unpaired electron to the conduction band by thermal activation is of the order of $10^1$ meV. These observations suggest that, while the electronic structure of Mu (and hence H) differs considerably from that of the conventional shallow level donor described by the effective mass model, Mu supplies a loosely bound electron, and thus, serves as a donor in rutile.
Small polaron formation in transition metal oxides, like the prototypical material rutile TiO$_2$, remains a puzzle and a challenge to simple theoretical treatment. In our combined experimental and theoretical study, we examine this problem using Raman spectroscopy of photo-excited samples and real-time time-dependent density functional theory (RT-TDDFT), which employs Ehrenfest dynamics to couple the electronic and ionic subsystems. We observe experimentally the unexpected stiffening of the $A_{1g}$ phonon mode under UV illumination and provide a theoretical explanation for this effect. Our analysis also reveals a possible reason for the observed anomalous temperature-dependence of the Hall mobility. Small polaron formation in rutile TiO$_2$ is a strongly non-adiabatic process and is adequately described by Ehrenfest dynamics at time scales of polaron formation.
We propose the design of low strained and energetically favourable mono and bilayer graphene overlayer on anatase TiO$_2$ (001) surface and examined the electronic structure of the interface with the aid of first principle calculations. In the absence of hybridization between surface TiO$_2$ and graphene states, dipolar fluctuations govern the minor charge transfer across the interface. As a result, both the substrate and the overlayer retain their pristine electronic structure. The interface with the monolayer graphene retains its gapless linear band dispersion irrespective of the induced epitaxial strain. The potential gradient opens up a few meV bandgap in the case of Bernal stacking and strengthens the interpenetration of the Dirac cones in the case of hexagonal stacking of the bilayer graphene. The difference between the macroscopic average potential of the TiO$_2$ and graphene layer(s) in the heterostructure lies in the range 3 to 3.13 eV, which is very close to the TiO$_2$ bandgap ($sim$ 3.2 eV). Therefore, the proposed heterostructure will exhibit enhanced photo-induced charge transfer and the graphene component will serve as a visible light sensitizer.
Recently, rutile RuO$_2$ has raised interest for its itinerant antiferromagnetism, crystal Hall effect, and strain-induced superconductivity. Understanding and manipulating these properties demands resolving the electronic structure and the relative roles of the rutile crystal field and $4d$ spin-orbit coupling (SOC). Here, we use O-K and Ru $M_3$ x-ray absorption (XAS) and Ru $M_3$ resonant inelastic x-ray scattering (RIXS) to disentangle the contributions of crystal field, SOC, and electronic correlations in RuO$_2$. The locally orthorhombic site symmetry of the Ru ions introduces significant crystal field contributions beyond the approximate octahedral coordination yielding a crystal field energy scale of $Delta(t_{2g})approx 1$ eV breaking the degeneracy of the $t_{2g}$ orbitals. This splitting exceeds the Ru SOC ($approx160$ meV) suggesting a more subtle role of SOC, primarily through the modification of itinerant (rather than local) $4d$ electronic states, ultimately highlighting the importance of the local symmetry in RuO$_2$. Remarkably, our analysis can be extended to other members of the rutile family, thus advancing the comprehension of the interplay among crystal field symmetry, electron correlations, and SOC in transition metal compounds with the rutile structure.
We report measurements of the diffusion rate of isolated ion-implanted $^{8}$Li$^{+}$ within $sim$120 nm of the surface of oriented single-crystal rutile TiO$_2$ using a radiotracer technique. The $alpha$-particles from the $^{8}$Li decay provide a sensitive monitor of the distance from the surface and how the depth profile of $^{8}$Li evolves with time. The main findings are that the implanted Li$^{+}$ diffuses and traps at the (001) surface. The T-dependence of the diffusivity is described by a bi-Arrhenius expression with activation energies of 0.3341(21) eV above 200 K, whereas at lower temperatures it has a much smaller barrier of 0.0313(15) eV. We consider possible origins for the surface trapping, as well the nature of the low-T barrier.
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