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Register a new userStudy of narrowband single photon emitters in polycrystalline diamond films
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Quantum information processing and integrated nanophotonics require robust generation of single photon emitters on demand. In this work we demonstrate that diamond films grown by microwave plasma chemical vapour deposition on a silicon substrate host bright, narrowband single photon emitters in the visible to near infrared spectral range. The emitters possess fast lifetime, absolute photostability, and exhibit full polarization at excitation and emission. Pulsed and continuous laser excitations confirm their quantum behaviour at room temperature, while low temperature spectroscopy is done to investigate their inhomogeneous broadening. Our results advance the knowledge of solid state single photon sources and open pathways for their practical implementation in quantum communication and quantum information processing.
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We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.
Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. Here, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
The surface topography of diamond coatings strongly affects surface properties such as adhesion, friction, wear, and biocompatibility. However, the understanding of multi-scale topography, and its effect on properties, has been hindered by conventional measurement methods, which capture only a single length scale. Here, four different polycrystalline diamond coatings are characterized using transmission electron microscopy to assess the roughness down to the sub-nanometer scale. Then these measurements are combined, using the power spectral density (PSD), with conventional methods (stylus profilometry and atomic force microscopy) to characterize all scales of topography. The results demonstrate the critical importance of measuring topography across all length scales, especially because their PSDs cross over one another, such that a surface that is rougher at a larger scale may be smoother at a smaller scale and vice versa. Furthermore, these measurements reveal the connection between multi-scale topography and grain size, with characteristic scaling behavior at and slightly below the mean grain size, and self-affine fractal-like roughness at other length scales. At small (subgrain) scales, unpolished surfaces exhibit a common form of residual roughness that is self-affine in nature but difficult to detect with conventional methods. This approach of capturing topography from the atomic- to the macro-scale is termed comprehensive topography characterization, and all of the topography data from these surfaces has been made available for further analysis by experimentalists and theoreticians. Scientifically, this investigation has identified four characteristic regions of topography scaling in polycrystalline diamond materials.
Quantum technology has grown out of quantum information theory and now provides a valuable tool that researchers from numerous fields can add to their toolbox of research methods. To date, various systems have been exploited to promote the application of quantum information processing. The systems that can be used for quantum technology include superconducting circuits, ultra-cold atoms, trapped ions, semiconductor quantum dots, and solid-state spins and emitters. In this review, we will discuss the state of the art on material platforms for spin-based quantum technology, with a focus on the progress in solid-state spins and emitters in several leading host materials, including diamond, silicon carbide, boron nitride, silicon, two-dimensional semiconductors, and other materials. We will highlight how first-principles calculations can serve as an exceptionally robust tool for finding the novel defect qubits and single photon emitters in solids, through detailed predictions of the electronic, magnetic and optical properties.
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