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Register a new userA Germanium-Vacancy Single Photon Source in Diamond
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Color centers in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. Here, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.
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The nitrogen-vacancy center in diamond has been explored extensively as a light-matter interface for quantum information applications, however it is limited by low coherent photon emission and spectral instability. Here, we present a promising interface based on an alternate defect with superior optical properties (the germanium-vacancy) coupled to a finesse $approx11{,}000$ fiber cavity, resulting in a $31^{+11}_{-15}$-fold increase in the spectral density of emission. This work sets the stage for cryogenic experiments, where we predict a measurable increase in the spontaneous emission rate.
We present high-resolution, all-optical thermometry based on ensembles of GeV color center in diamond. Due to the unique properties of diamond, an all-optical approach using this method opens a way to produce non-invasive, back-action-free temperature measurements in a wide range of temperatures, from a few Kelvin to 1100 Kelvin.
Photochromism in single nitrogen-vacancy optical centers in diamond is demonstrated. Time-resolved optical spectroscopy shows that intense irradiation at 514 nm switches the nitrogen-vacancy defects to the negative form. This defect state relaxes back to the neutral form under dark conditions. Temporal anticorrelation of photons emitted by the different charge states of the optical center unambiguously indicates that the nitrogen-vacancy defect accounts for both 575 nm and 638 nm emission bands. Possible mechanism of photochromism involving nitrogen donors is discussed.
Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium oxide to realize the insitu doping. Finally, we show that these membranes are suitable for engineering of photonic resonators such as microring cavities with quality factors of 1500. The robust and scalable approach to engineer single crystal diamond membranes containing emerging color centers is a promising pathway for realization of diamond integrated quantum nanophotonic circuits on a chip.
Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single photon source with high efficiency, increased emission rate, and improved spectral purity compared to the intrinsic emitter properties. We use a fiber-based microcavity with a mode volume as small as $3.4~lambda^3$ and a quality factor of $1.9times 10^4$ and observe an effective Purcell factor of up to 9.2. We furthermore study modifications of the internal rate dynamics and propose a rate model that closely agrees with the measurements. We observe lifetime changes of up to 31%, limited by the finite quantum efficiency of the emitters studied here. With improved materials, our achieved parameters predict single photon rates beyond 1 GHz.
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