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Register a new userSingle-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses
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Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.
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We describe a technique for fabricating micro- and nano-structures incorporating fluorescent defects in diamond with a positional accuracy in the hundreds of nanometers. Using confocal fluorescence microscopy and focused ion beam (FIB) etching we first locate a suitable defect with respect to registration marks on the diamond surface and then etch a structure using these coordinates. We demonstrate the technique here by etching an 8 micron diameter hemisphere positioned such that a single negatively charged nitrogen-vacancy defect lies at its origin. This type of structure increases the photon collection efficiency by removing refraction and aberration losses at the diamond-air interface. We make a direct comparison of the fluorescence photon count rate before and after fabrication and observe an 8-fold increase due to the presence of the hemisphere.
The efficiency of collecting photons from optically active defect centres in bulk diamond is greatly reduced by refraction and reflection at the diamond-air interface. We report on the fabrication and measurement of a geometrical solution to the problem; integrated solid immersion lenses (SILs) etched directly into the surface of diamond. An increase of a factor of 10 was observed in the saturated count-rate from a single negatively charged nitrogen-vacancy (NV-) within a 5um diameter SIL compared with NV-s under a planar surface in the same crystal. A factor of 3 reduction in background emission was also observed due to the reduced excitation volume with a SIL present. Such a system is potentially scalable and easily adaptable to other defect centres in bulk diamond.
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.
Single photons are fundamental elements for quantum information technologies such as quantum cryptography, quantum information storage and optical quantum computing. Colour centres in diamond have proven to be stable single photon sources and thus essential components for reliable and integrated quantum information technology. A key requirement for such applications is a large photon flux and a high efficiency. Paying tribute to various attempts to maximise the single photon flux we show that collection efficiencies of photons from colour centres can be increased with a rather simple experimental setup. To do so we spin-coated nanodiamonds containing single nitrogen-vacancy colour centres on the flat surface of a ZrO2 solid immersion lens. We found stable single photon count rates of up to 853 kcts/s at saturation under continuous wave excitation while having excess to more than 100 defect centres with count rates from 400 kcts/s to 500 kcts/s. For a blinking defect centre we found count rates up to 2.4 Mcts/s for time intervals of several ten seconds. It seems to be a general feature that very high rates are accompanied by a blinking behaviour. The overall collection efficiency of our setup of up to 4.2% is the highest yet reported for N-V defect centres in diamond. Under pulsed excitation of a stable emitter of 10 MHz, 2.2% of all pulses caused a click on the detector adding to 221 kcts/s thus opening the way towards diamond based on-demand single photon sources for quantum applications.
Stress and strain are important factors in determining the mechanical, electronic, and optical properties of materials, relating to each other by the materials elasticity or stiffness. Both are represented by second rank field tensors with, in general, six independent components. Measurements of these quantities are usually achieved by measuring a property that depends on the translational symmetry and periodicity of the crystal lattice, such as optical phonon energies using Raman spectroscopy, the electronic band gap using cathodoluminescence, photoelasticity via the optical birefringence, or Electron Back Scattering Diffraction (EBSD). A reciprocal relationship therefore exists between the maximum sensitivity of the measurements and the spatial resolution. Furthermore, of these techniques, only EBSD and off-axis Raman spectroscopy allow measurement of all six components of the stress tensor, but neither is able to provide full 3D maps. Here we demonstrate a method for measuring the full stress tensor in diamond, using the spectral and optical polarization properties of the photoluminescence from individual nitrogen vacancy (NV) colour centres. We demonstrate a sensitivity of order 10 MPa, limited by local fluctuations in the stress in the sample, and corresponding to a strain of about 10^-5, comparable with the best sensitivity provided by other techniques. By using the colour centres as built-in local sensors, the technique overcomes the reciprocal relationship between spatial resolution and sensitivity and offers the potential for measuring strains as small as 10^-9 at spatial resolution of order 10 nm. Furthermore it provides a straightforward route to volumetric stress mapping. Aside from its value in understanding strain distributions in diamond, this new approach to stress and strain measurement could be adapted for use in micro or nanoscale sensors.
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