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Register a new userTopological metal behavior in GeBi2Te4 single crystals
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The metallic character of the GeBi2Te4 single crystals is probed using a combination of structural and physical properties measurements, together with density functional theory (DFT) calculations. The structural study shows distorted Ge coordination polyhedra, mainly of the Ge octahedra. This has a major impact on the band structure, resulting in bulk metallic behavior of GeBi2Te4, as indicated by DFT calculations. Such calculations place GeBi2Te4 in a class of a few known non-trivial topological metals, and explains why an observed Dirac point lies below the Fermi energy at about -0.12eV. A topological picture of GeBi2Te4 is confirmed by the observation of surface state modulations by scanning tunneling microscopy (STM).
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Closed-topology magnetic domains are usually observed in thin films and in an applied magnetic field. Here we report the observation of rectangular cross-section tubular ferromagnetic domains in thick single crystals of CeAgSb2 in zero applied field. Relatively low exchange energy, small net magnetic moment, and anisotropic in-plane crystal electric fields lower the domain wall energy and allow for the formation of the closed-topology patterns. Upon cycling the magnetic field, the domain structure irreversibly transforms into a dendritic open-topology pattern. This transition between closed and open topologies results in a topological magnetic hysteresis - the actual hysteresis in magnetization, not due to the imperfections and pinning, but due to the difference in the pattern morphology. Similar physics was suggested before in pure type-I superconductors and is believed to be a generic feature of other nonlinear multi-phase systems in the clean limit.
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppress the nucleation and an inner tube is adopted as both a separator and a flow restrictor, favoring the growth of large-size and high-quality TMD single crystals successfully. Three examples are presented, the effective growth of millimeter-sized MoSe2 and MoTe2 single crystals, and the greatly shortened growth period for PtSe2 single crystal, all of which are synthesized in high quality according to detailed characterizations. The mechanism of seeded CVT is discussed. Furthermore, a phototransistor based on exfoliated multi-layered MoSe2 displays excellent photoresponse in ambient conditions, and considerably rapid rise and fall time of 110 and 125 us are obtained. This work paves the way for developing a facile and versatile method to synthesize high-quality TMD single crystals in laboratory, which could serve as favorable functional materials for potential low-dimensional optoelectronics.
The paper describes heterostructures spontaneously formed in PMN-PT single crystals cooled under bias electric field applied along [001]pc and then zero-field-heated in the vicinity of the so-called depoling temperature. In particular, formation of lamellar structures composed of tetragonal-like and rhombohedral-like layers extending over macroscopic (mm) lengths is demonstrated by optical observations and polarized Raman investigations.
We report on the growth of single-crystal potassium birnessite (K0.31MnO2*0.41H2O) and present both the average and local structural characterization of this frustrated magnetic system. Single crystals were obtained employing a flux growth method with a KNO3/B2O3 flux at 700 {deg}C. Single-crystal X-ray diffraction revealed an average orthorhombic symmetry, with space group Cmcm. A combination of high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with atomic resolution energy dispersive X-ray spectroscopy (EDS) demonstrated the layered structure of potassium birnessite with manganese-containing planes well separated by layers of potassium atoms. MnO6 octahedra and the K/H2O planes were clearly imaged via integrated differential phase contrast (iDPC) STEM. Furthermore, iDPC-STEM also revealed the existence of local domains with alternating contrast of the manganese oxide planes, most likely originating from charge ordering of Mn3+ and Mn4+ along the c-axis. These charge-ordered domains are clearly correlated with a reduction in the c-lattice parameter compared to the rest of the matrix. The insight gained from this work allows for a better understanding of the correlation between structure and magnetic properties.
Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.
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