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Register a new userFormation and stability of a two-dimensional nickel silicide on Ni (111) an Auger, LEED, STM, and high-resolution photoemission Study
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Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon monolayer deposited at room temperature onto a Ni (111) substrate. The variations of the Si surface concentration, recorded by AES at 300{deg}C and 400{deg}C, show at the beginning a rapid Si decreasing followed by a slowing down up to a plateau equivalent to about 1/3 silicon monolayer. STM images and LEED patterns, both recorded at room temperature just after annealing, reveal the formation of an ordered hexagonal superstructure(rot3xrot3)R30{deg}-type. From these observations and from a quantitative analysis of HR-PES data, recorded before and after annealing, we propose that the (rot3 x rot3)R30{deg}superstructure corresponds to a two dimensional (2D) Ni2Si surface silicide.
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In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2, was used as a Ni precursor and ammonia plasma was used as a reactant. This was the first attempt to deposit Ni thin film using Ni(iPr-DAD)2 as a precursor for the ALD process. The RPALD Ni film was deposited with a growth rate of around 2.2{AA}/cycle at 250 {deg}C and showed significant low resistivity of 33 {mu}{Omega}cm with a total impurity concentration of around 10 at. %.The impurities of the thin film, carbon and nitrogen, were existent by the forms of C-C and C-N in a bonding state. The impurities removal tendency was investigated by comparing of experimental conditions, namely process temperature and pressure. Nitrogen impurity was removed by thermal desorption during each ALD cycle and carbon impurity was reduced by the optimizing of the process pressure which is directly related with a mean free path of NH3 plasma. After Ni deposition, nickel silicide was formed by RTA in a vacuum ambient for 1 minute. A nickel silicide layer from ALD Ni and PVD Ni was compared at the annealing temperature from 500 to 900 {deg}C. NiSi from ALD Ni showed better thermal stability due to the contribution of small amounts of carbon and nitrogen in the asdeposited Ni thin film. Degradation of the silicide layer was effectively suppressed with a use of ALD Ni.
A nanorod structure has been observed on the Ho/Ge(111) surface using scanning tunneling microscopy (STM). The rods do not require patterning of the surface or defects such as step edges in order to grow as is the case for nanorods on Si(111). At low holmium coverage the nanorods exist as isolated nanostructures while at high coverage they form a periodic 5x1 structure. We propose a structural model for the 5x1 unit cell and show using an ab initio calculation that the STM profile of our model structure compares favorably to that obtained experimentally for both filled and empty states sampling. The calculated local density of states shows that the nanorod is metallic in character.
We have performed electron energy-loss spectroscopy (EELS) studies of Ni(111), graphene/Ni(111), and the graphene/Au/Ni(111) intercalation-like system at different primary electron energies. A reduced parabolic dispersion of the pi plasmon excitation for the graphene/Ni(111) system is observed compared to that for bulk pristine and intercalated graphite and to linear for free graphene, reflecting the strong changes in the electronic structure of graphene on Ni(111) relative to free-standing graphene. We have also found that intercalation of gold underneath a graphene layer on Ni(111) leads to the disappearance of the EELS spectral features which are characteristic of the graphene/Ni(111) interface. At the same time the shift of the pi plasmon to the lower loss-energies is observed, indicating the transition of initial system of strongly bonded graphene on Ni(111) to a quasi free-standing-like graphene state.
The electronic and crystallographic structure of the graphene/Rh(111) moire lattice is studied via combination of density-functional theory calculations and scanning tunneling and atomic force microscopy (STM and AFM). Whereas the principal contrast between hills and valleys observed in STM does not depend on the sign of applied bias voltage, the contrast in atomically resolved AFM images strongly depends on the frequency shift of the oscillating AFM tip. The obtained results demonstrate the perspectives of application atomic force microscopy/spectroscopy for the probing of the chemical contrast at the surface.
We have investigated the magnetism of the bare and graphene-covered (111) surface of a Ni single crystal employing three different magnetic imaging techniques and ab initio calculations, covering length scales from the nanometer regime up to several millimeters. With low temperature spinpolarized scanning tunneling microscopy (SP-STM) we find domain walls with widths of 60 - 90 nm, which can be moved by small perpendicular magnetic fields. Spin contrast is also achieved on the graphene-covered surface, which means that the electron density in the vacuum above graphene is substantially spin-polarized. In accordance with our ab initio calculations we find an enhanced atomic corrugation with respect to the bare surface, due to the presence of the carbon pz orbitals and as a result of the quenching of Ni surface states. The latter also leads to an inversion of spinpolarization with respect to the pristine surface. Room temperature Kerr microscopy shows a stripe like domain pattern with stripe widths of 3 - 6 {mu}m. Applying in-plane-fields, domain walls start to move at about 13 mT and a single domain state is achieved at 140 mT. Via scanning electron microscopy with polarization analysis (SEMPA) a second type of modulation within the stripes is found and identified as 330 nm wide V-lines. Qualitatively, the observed surface domain pattern originates from bulk domains and their quasi-domain branching is driven by stray field reduction.
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