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Register a new userElectromagnetic properties of polycrystalline diamond from 35K to room temperature and microwave to terahertz frequencies
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Added by
Jean-Michel Le Floch
Publication date
2013
fields
Physics
and research's language is
English
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Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material. The commonly used material for building the best cryogenic microwave oscillators is sapphire. However sapphire is becoming a limiting factor for higher frequencies design. It is then important to find new candidates that can fulfil the requirements for millimetre wave low noise oscillators at room and cryogenic temperatures. These clocks are used as a reference in many fields, like modern telecommunication systems, radio astronomy (VLBI), and precision measurements at the quantum limit. High-resolution measurements were made of the temperature-dependence of the electromagnetic properties of a polycrystalline diamond disk at temperatures between 35 K and 330 K at microwave to sub-millimetre wave frequencies. The cryogenic measurements were made using a TE01{delta} dielectric mode resonator placed inside a vacuum chamber connected to a single-stage pulse-tube cryocooler. The high frequency characterization was performed at room temperature using a combination of a quasi-optical two-lens transmission setup, a Fabry-Perot cavity and a whispering gallery mode resonator excited with waveguides. Our CVD diamond sample exhibits a decreasing loss tangent with increasing frequencies. We compare the results with well known crystals. This comparison makes clear that polycrystalline diamond could be an important material to generate stable frequencies at millimetre waves.
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Charge-density wave (CDW) is one of the most fundamental quantum phenomena in solids. Different from ordinary metals in which only single particle excitations exist, CDW also has collective excitations and can carry electric current in a collective fashion. Manipulating this collective condensation for applications has long been a goal in the condensed matter and materials community. Here we show that the CDW system of 1T-TaS2 is highly sensitive to light directly from visible down to terahertz, with current responsivities around the order of ~1 AW-1 at room temperature. Our findings open a new avenue for realizing uncooled, ultrabroadband and sensitive photoelectronics continuously down to terahertz spectral range.
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K - 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 K and reaching zero at ~930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ~ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ~ 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with degenerate semiconductors, and the dS/dT and room temperature activation energy show a linear correlation. The single-crystal fcc is calculated to have dS/dT = 0.153 {mu}V/K for an activation energy of zero and a Fermi level 0.16 eV below the valance band edge.
The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missing. In particular, active polarization and phase control over a broad THz band would have major applications in science and technology. It would, e.g., enable high-speed modulation for wireless communications and real-time chiral structure spectroscopy of proteins and DNA. In physics, this technology can be also used to precisely measure very weak Faraday and Kerr effects, as required, for instance, to probe the electrodynamics of topological insulators. Phase control of THz radiation has been demonstrated using various approaches. They depend either on the physical dimensions of the phase plate (and hence provide a fixed phase shift) or on a mechanically controlled time delay between optical pulses (and hence prevent fast modulation). Here, we present data that demonstrate the room temperature giant Faraday effect in HgTe can be electrically tuned over a wide frequency range (0.1-1 THz). The principle of operation is based on the field effect in a thin HgTe semimetal film. These findings together with the low scattering rate in HgTe open a new approach for high-speed amplitude and phase modulation in the THz frequency range.
It is well known that diamond does not deform plastically at room temperature and usually fails in catastrophic brittle fracture. Here we demonstrate room-temperature dislocation plasticity in sub-micrometer sized diamond pillars by in-situ mechanical testing in the transmission electron microscope. We document in unprecedented details of spatio-temporal features of the dislocations introduced by the confinement-free compression, including dislocation generation and propagation. Atom-resolved observations with tomographic reconstructions show unequivocally that mixed-type dislocations with Burgers vectors of 1/2<110> are activated in the non-close-packed {001} planes of diamond under uniaxial compression of <111> and <110> directions, respectively, while being activated in the {111} planes under the <100> directional loading, indicating orientation-dependent dislocation plasticity. These results provide new insights into the mechanical behavior of diamond and stimulate reconsideration of the basic deformation mechanism in diamond as well as in other brittle covalent crystals at low temperatures.
Despite decades of extensive research on mechanical properties of diamond, much remains to be understood in term of plastic deformation mechanisms due to the poor deformability at room temperature. In a recent work in Advanced Materials, it was claimed that room-temperature plasticity occurred in <001>-oriented single-crystal diamond nanopillars based on observation of unrecovered deformation inside scanning electron microscope. The plastic deformation was suggested to be mediated by a phase transition from sp3 carbon to an O8-carbon phase by molecular dynamics simulations. By comparison, our in-situ transmission electron microscopy study reveals that the room-temperature plasticity can be carried out by dislocation slip in both <100> and <111>-oriented diamond nanopillars. The brittle-to-ductile transition is highly dependent on the stress state. We note that the surface structure may play a significant role in the deformation mechanisms as the incipient plasticity always occurs from the surface region in nanoscale diamonds.
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