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Register a new userDislocation Slip or Phase Transformation Lead to Room-Temperature Plasticity in Diamond: Comment on Plastic Deformation of Single-Crystal Diamond Nanopillars
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Despite decades of extensive research on mechanical properties of diamond, much remains to be understood in term of plastic deformation mechanisms due to the poor deformability at room temperature. In a recent work in Advanced Materials, it was claimed that room-temperature plasticity occurred in <001>-oriented single-crystal diamond nanopillars based on observation of unrecovered deformation inside scanning electron microscope. The plastic deformation was suggested to be mediated by a phase transition from sp3 carbon to an O8-carbon phase by molecular dynamics simulations. By comparison, our in-situ transmission electron microscopy study reveals that the room-temperature plasticity can be carried out by dislocation slip in both <100> and <111>-oriented diamond nanopillars. The brittle-to-ductile transition is highly dependent on the stress state. We note that the surface structure may play a significant role in the deformation mechanisms as the incipient plasticity always occurs from the surface region in nanoscale diamonds.
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It is well known that diamond does not deform plastically at room temperature and usually fails in catastrophic brittle fracture. Here we demonstrate room-temperature dislocation plasticity in sub-micrometer sized diamond pillars by in-situ mechanical testing in the transmission electron microscope. We document in unprecedented details of spatio-temporal features of the dislocations introduced by the confinement-free compression, including dislocation generation and propagation. Atom-resolved observations with tomographic reconstructions show unequivocally that mixed-type dislocations with Burgers vectors of 1/2<110> are activated in the non-close-packed {001} planes of diamond under uniaxial compression of <111> and <110> directions, respectively, while being activated in the {111} planes under the <100> directional loading, indicating orientation-dependent dislocation plasticity. These results provide new insights into the mechanical behavior of diamond and stimulate reconsideration of the basic deformation mechanism in diamond as well as in other brittle covalent crystals at low temperatures.
The critical dynamics of dislocation avalanches in plastic flow is examined using a phase field crystal (PFC) model. In the model, dislocations are naturally created, without any textit{ad hoc} creation rules, by applying a shearing force to the perfectly periodic ground state. These dislocations diffuse, interact and annihilate with one another, forming avalanche events. By data collapsing the event energy probability density function for different shearing rates, a connection to interface depinning dynamics is confirmed. The relevant critical exponents agree with mean field theory predictions.
Plastic deformation mediated by collective dislocation dynamics is investigated in the two-dimensional phase-field crystal model of sheared single crystals. We find that intermittent fluctuations in the dislocation population number accompany bursts in the plastic strain-rate fluctuations. Dislocation number fluctuations exhibit a power-law spectral density $1/f^2$ at high frequencies $f$. The probability distribution of number fluctuations becomes bimodal at low driving rates corresponding to a scenario where low density of defects alternate at irregular times with high population of defects. We propose a simple stochastic model of dislocation reaction kinetics that is able to capture these statistical properties of the dislocation density fluctuations as a function of shear rate.
We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.
In their Letter, Haziot et al. [Phys. Rev. Lett. 110 (2013) 035301] report a novel phenomenon of giant plasticity for hcp Helium-4 quantum crystals. They assert that Helium-4 exhibits mechanical properties not found in classical plasticity theory. Specifically, they examine high-quality crystals as a function of temperature and applied strain, where the shear modulus reaches a plateau and dissipation becomes close to zero; both quantities are reported to be independent of stress and strain, implying a reversible dissipation process and quantum tunneling. In this Comment, we show that these signatures can be explained with a classical model of thermally activated dislocation glide without the need to invoke quantum tunneling or dissipationless motion. Recently, we proposed a dislocation glide model in solid Helium-4 containing the dissipation contribution in the presence of other dislocations with qualitatively similar behavior [Zhou et al., Philos. Mag. Lett. 92 (2012) 608].
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