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Register a new userFerromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
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Ferromagnetic InMnAs has been prepared by Mn ion implantation and pulsed laser annealing. The InMnAs layer reveals a saturated magnetization of 2.6 mu_B/Mn at 5 K and a perpendicular magnetic anisotropy. The Curie temperature is determined to be 46 K, which is higher than those in previous reports with similar Mn concentrations. Ferromagnetism is further evidenced by the large magnetic circular dichroism.
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This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E = 30 keV, D = 2*10^17 cm^-2) with respect to those of untreated a-SiO2.The similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion-implantation induces the local high pressure effect which leads to an appearance of SiO6-structural units in alpha-SiO2 host, forming stishovite-like local atomic structure. This process can be described within electronic bonding transition from the four-fold quartz-like to six-fold stishovite-like high-pressure phase in SiO2 host-matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D = 3*10^16 cm^-2.
Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO2 thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [101] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations studied, the incorporation of Mo did not contribute to increase the conductivity of the films or to enhance the ferromagnetic order of the Co-doped films.
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected. In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10^{-9} ohm.cm2 contact resistivity, which has been already demonstrated by using the dopant surface segregation induced by MLA. However, the beneficial layer of a few nanometers at the surface may be easily consumed during subsequent contact cleaning and metallization. EC helps to address such kind of process integration issues, enabling the optimal positioning of the peak of the dopant chemical profile. However, there is a lack of experimental studies of EC in heavily-doped semiconductor materials. Furthermore, to the best of our knowledge, dopant activation by EC has never been experimentally reported. In this paper, we present dopant redistribution and activation by an EC process induced by UV nanosecond-pulsed MLA in heavily gallium (Ga) ion-implanted high Ge content SiGe. Based on the obtained results, we also highlight potential issues of integrating EC into real device fabrication processes and discuss how to manage them.
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^circ$C. Morphological and structural modifications have been followed by grazing incidence and $theta$-2$theta$ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by Electron Probe Micro-Analysis. The in-depth variation of composition has been studied by Secondary Neutral Mass Spectroscopy. We show that Pulsed Laser Deposition at 275$^circ$C makes the formation of a 1 m thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible.
In this paper, we discuss the results of our study of the synthesis of endohedral iron-fullerenes. A low energy Fe+ ion beam was irradiated to C60 thin film by using a deceleration system. Fe+-irradiated C60 thin film was analyzed by high performance liquid chromatography and laser desorption/ionization time-of-flight mass spectrometry. We investigated the performance of the deceleration system for using a Fe+ beam with low energy. In addition, we attempted to isolate the synthesized material from a Fe+-irradiated C60 thin film by high performance liquid chromatography.
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