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Register a new userSynthesis of endohedral iron-fullerenes by ion implantation
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In this paper, we discuss the results of our study of the synthesis of endohedral iron-fullerenes. A low energy Fe+ ion beam was irradiated to C60 thin film by using a deceleration system. Fe+-irradiated C60 thin film was analyzed by high performance liquid chromatography and laser desorption/ionization time-of-flight mass spectrometry. We investigated the performance of the deceleration system for using a Fe+ beam with low energy. In addition, we attempted to isolate the synthesized material from a Fe+-irradiated C60 thin film by high performance liquid chromatography.
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A new multifunctional 2D material is theoretically predicted based on systematic ab-initio calculations and model simulations for the honeycomb lattice of endohedral fullerene W@C28 molecules. It has structural bistability, ferroelectricity, multiple magnetic phases, and excellent valley characters and can be easily functionalized by the proximity effect with magnetic isolators such as MnTiO3. Furthermore, we may also manipulate the valley Hall and spin transport properties by selectively switch a few W@C28 molecules to the metastable phase. These findings pave a new way in integrate different functions in a single 2D material for technological innovations.
Well-protected magnetization, tunable quantum states and long coherence time are desired for developing magnetic molecules as qubits quantum information processing and storage. Based on the first-principles calculations and dynamic simulations, we demonstrate that endohedral fullerene molecule Ir@C28 has stable magnetization, huge magnetic anisotropy energy (> 30 meV per molecule) and bias-tunable structural phases. In particular, qubits based on Ir@C28 may have coherence times up to several mS at high temperature (~100K) after full consideration of spin-vibration couplings. These results suggest a new strategy of using endohedral fullerene as qubits for technological breakthroughs.
X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe$^{3+}$ are detected on the surface of all doped samples due to oxygen exposure. These experimental findings are compared with density functional theory (DFT) calculations of formation energies for different configurations of structural defects in the implanted TiO$_2$:Fe system. According to our calculations, the clustering of Fe-atoms in TiO$_2$:Fe thin films can be attributed to the formation of combined substitutional and interstitial defects. Further, the differences due to Fe doping in pellet and thin film samples can ultimately be attributed to different surface to volume ratios.
We discuss the complicated resonance structure of the endohedral atom photoionization cross section. Very strong enhancement and interference patterns in the photoionization cross-section of the valent and subvalent subshells of noble gas endohedral atoms A@C60 are demonstrated. It is shown also that the atomic Giant resonance can be either completely destroyed or remains almost untouched depending on the velocity of photoelectrons that are emitted in the resonances decay process. These effects are results of dynamic modification of the incoming beam of radiation due to polarization of the fullerenes electron shell and reflection of photoelectrons be the fullerenes shell static potential. We have considered the outer np- and subvalent ns-subshells for Ne, Ar, Kr and Xe noble gas atoms. The modification of the Giant resonances is considered for a whole sequence of endohedrals with atoms and ions Xe, Ba, La, Ce+, Ce+4, Eu. The polarization of the fullerene shell is expressed via the total photoabsorption cross section. The photoelectron reflection from the static potential is taken into account in the frame of the so-called bubble potential that is a spherical -type potential.
This is the abstract. The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2-host material after pulsed implantation with [Mn+] and [Co+, Mn+]-ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E = 30 keV, D = 2*10^17 cm^-2) with respect to those of untreated a-SiO2.The similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion-implantation induces the local high pressure effect which leads to an appearance of SiO6-structural units in alpha-SiO2 host, forming stishovite-like local atomic structure. This process can be described within electronic bonding transition from the four-fold quartz-like to six-fold stishovite-like high-pressure phase in SiO2 host-matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D = 3*10^16 cm^-2.
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