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Register a new userStructure-dependent optical and electrical transport properties of nanostructured Al-doped ZnO
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Added by
Carlo Spartaco Casari
Publication date
2012
fields
Physics
and research's language is
English
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The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical properties. A variety of structures, ranging from compact polycristalline films to mesoporous, hierarchically organized cluster assemblies, are grown by Pulsed Laser Deposition at room temperature at different oxygen pressures. We investigate the dependence of functional properties on structure and morphology and show how the correlation between electrical and optical properties can be studied to evaluate energy gap, conduction band effective mass and transport mechanisms. Understanding these properties opens the way for specific applications in photovoltaic devices, where optimized combinations of conductivity, transparency and light scattering are required.
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Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laser deposition on the surface of porous Al2O3. The resistance peak temperature (Tp) of the NS-LCMO increases with increasing average thickness of the films, while their Curie temperatures (Tc) remain unchanged. The coercive field of the samples increases with decreasing film thickness and its temperature dependence can be well described by Hc(T) = Hc(0)[1-(T/TB)1/2]. A large magnetoresistance and strong memory effect were observed for the NS-LCMO. The results are discussed in terms of the size effect, Coulomb blockade and magnetic tunneling effect. This work also demonstrates a new way to get nanostructured manganites.
In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most important scattering parameters for controlling electron concentration and electron mobility were obtained. Treatment of intrinsic mechanisms included polar-optical phonon scattering, piezoelectric scattering and acoustic deformation potential scattering. For extrinsic mechanisms, ionized impurity, dislocation scattering, and strain-induced fields were included. For bulk ZnO, the reported experimental data were corrected for removing the effects of a degenerate layer at the ZnO/sapphire interface via a two layer Hall effect model. Also, donor density, acceptor density and donor activation energy were determined via the charge balance equation. This sample exhibited hopping conduction below 50K and dislocation scattering closely controlled electron mobility closely. The obtained results indicated that the enhancement of electron mobility in double sample, compared with the single one, can be attributed to the reduction of dislocation density, two dimensional impurity density in the potential well due to background impurities, and/or interface charge and strain-induced fields, which can be related to better electron confinement in the channel and enhancement in the sheet carrier concentration of 2DEG in this sample.
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.
In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structure and morphology and synthesized by pulsed laser deposition (PLD) under different oxygen pressure conditions. The comparison of Raman data for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry and doping. Moreover Raman measurements with three different excitation lines (532, 457 and 325 nm) point out a strong correlation between vibrational and electronic properties. This observation confirms the relevance of a multi-wavelength Raman investigation to obtain a complete structural characterization of advanced doped oxide materials.
Nanocrystalline ribbons of inverse Heusler alloy Mn2Ni1.6Sn0.4 have been synthesised by melt spinning of the arc melted bulk precursor. The single phase ribbons crystallize into a cubic structure and exhibit very fine crystallite size of < 2 nm. Temperature dependent magnetization (M-T) measurements reveal that austenite (A)-martensite (M) phase transition begins at T~248 K and finishes at T~238 K during cooling cycle and these values increase to T~267 K and T~259 K while warming. In cooling cycle, the A-phase shows ferromagnetic (FM) ordering with a Curie temperature T~267 K, while both the FM-antiferromagnetic (AFM) and M-transitions occur at T~242 K. The M-phase undergoes FM transition at T~145 K. These transitions are also confirmed by temperature dependent resistivity measurements. The observed hysteretic behaviour of magnetization and resistivity in the temperature regime spanned by the A-M transition is a manifestation of the first order phase transition. Magnetization and susceptibility data also provide unambiguous evidence in favour of spin glass . The scaling of the glass freezing temperature (Tf) with frequency, extracted from the frequency dependent AC susceptibility measurements, confirms the existence of canonical spin glass at T<145 K. The occurrence of canonical spin glass has been explained in terms of the nanostructuring modified interactions between the FM correlations in the martensitic phase and the coexisting AFM.
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