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Register a new userField-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films
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A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.
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The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsagers theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic layers at domain walls, which both exhibit odd-parity magnetoresistive behavior. The peculiar angular variation of the response with respect to the relative alignments of the magnetization, magnetic field, and current reveal the two underlying microscopic mechanisms: spin-polarization-dependent scattering of a Zeeman-shifted Fermi surface and magnetoresistance driven by the anomalous velocity physics usually associated with the anomalous Hall effect.
We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.
We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicative of the existence of two types of carriers, the normal state magnetoresistance, negative in parallel magnetic field, a possible signature of spin scattering. These properties are compared to those of hole-doped cuprates, such as BiSr(La)CuO with comparable Tc.
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
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