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Register a new userMagnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films
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We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicative of the existence of two types of carriers, the normal state magnetoresistance, negative in parallel magnetic field, a possible signature of spin scattering. These properties are compared to those of hole-doped cuprates, such as BiSr(La)CuO with comparable Tc.
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Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dopings (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trapping, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD.
Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong temperature dependence were found below about 150 K. The magnetoresistance was found to be as large as 30% at 15 K at a magnetic field of 9 T. From the transport data we found that the transition near 155 K was accomplished in two steps: first one occurs at 155 K which may be associated with the structural transition, the second one takes place at about 140 K which may correspond to the spin-density wave like transition. In the superconducting sample with $T_c$ = 50 $ $K, it is found that the Hall coefficient also reveals a strong temperature dependence with a negative sign. But the magnetoresistance becomes very weak and does not satisfy the Kohlers scaling law. These dilemmatic results (strong Hall effect and very weak magnetoresistance) prevent to understand the normal state electric conduction by a simple multi-band model by taking account the electron and hole pockets. Detailed analysis further indicates that the strong temperature dependence of $R_H$ cannot be easily understood with the simple multi-band model either. A picture concerning a suppression to the density of states at the Fermi energy in lowering temperature is more reasonable. A comparison between the Hall coefficient of the undoped sample and the superconducting sample suggests that the doping may remove the nesting condition for the formation of the SDW order, since both samples have very similar temperature dependence above 175 K.
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.
We have studied the evolution of the structural modulation in epitaxial, c-axis oriented, Bi2Sr2-xLaxCuO6+d thin films when varying the La content x and for a given x as a function of oxygen content. A series of thin films with 0<x<0.8 have been prepared in-situ by rf magnetron sputtering and characterized by R(T) measurements and RBS, TEM and X-Ray diffraction techniques. The oxygen content of each individual film was varied by thermal annealing across the phase diagram. The evolution of the structural modulation has been thoroughly studied by X-Ray diffraction in determining the variation of the amplitude of satellite reflections in special 2 axes 2theta /theta-theta scans (reciprocal space scans). It is shown that the amplitude of the modulation along the c-axis decreases strongly when x increases from 0 to 0.2. It is demonstrated that this variation is essentially governed by La content x and that changing the oxygen content by thermal treatments has a much lower influence, even becoming negligible for x>0.2. Such study is important to understand the electronical properties of Bi2Sr2-xLaxCuO6+d thin films.
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of itinerant carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.
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