Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOdd-parity linear magnetoresistance and the planar Hall effect
66
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsagers theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic layers at domain walls, which both exhibit odd-parity magnetoresistive behavior. The peculiar angular variation of the response with respect to the relative alignments of the magnetization, magnetic field, and current reveal the two underlying microscopic mechanisms: spin-polarization-dependent scattering of a Zeeman-shifted Fermi surface and magnetoresistance driven by the anomalous velocity physics usually associated with the anomalous Hall effect.
rate research
Read More
A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.
Charge-transfer effect under odd-parity crystalline electric field (CEF) is analyzed theoretically. In quantum-critical metal $beta$-YbAlB$_4$, seven-fold configuration of B atoms surrounding Yb atom breaks local inversion symmetry at the Yb site, giving rise to the odd-parity CEF. Analysis of the CEF on the basis of hybridization picture shows that admixture of 4f and 5d wave functions at Yb with pure imaginary coefficient occurs, which makes magnetic-toroidal (MT) and electric-dipole (ED) degrees of freedom active. By constructing the minimal model for periodic crystal $beta$-YbAlB$_4$, we show that the MT as well as ED fluctuation is divergently enhanced at the quantum critical point of valence transition simultaneously with critical valence fluctuations.
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50~K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50~K, which might be the direct driving force of the electron-hole ``compensation and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liquid models. We propose that the transport properties of quasi one-dimensional Bechgaard salts at high temperatures can be described within the Fermi liquid description.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
