We numerically calculate the conductivity $sigma$ of an undoped graphene sheet (size $L$) in the limit of vanishingly small lattice constant. We demonstrate one-parameter scaling for random impurity scattering and determine the scaling function $beta(sigma)=dlnsigma/dln L$. Contrary to a recent prediction, the scaling flow has no fixed point ($beta>0$) for conductivities up to and beyond the symplectic metal-insulator transition. Instead, the data supports an alternative scaling flow for which the conductivity at the Dirac point increases logarithmically with sample size in the absence of intervalley scattering -- without reaching a scale-invariant limit.
The dynamical approach is applied to ballistic transport in mesoscopic graphene samples of length L and contact potential U. At times shorter than both relevant time scales, the flight time and hslash/U, the major effect of the electric field is to create electron - hole pairs, i.e. causing interband transitions. In linear response this leads (for width W>>L) to conductivity pi/2 e^{2}/h. On the other hand, at times lager than the two scales the mechanism and value are different. It is shown that the conductivity approaches its intraband value, equal to the one obtained within the Landauer-Butticker approach resulting from evanescent waves. It is equal to 4/pi e^{2}/h for W>>L. The interband transitions, within linear response, are unimportant in this limit. Between these extremes there is a crossover behaviour dependent on the ratio between the two time scales. At strong electric fields (beyond linear reponse) the interband process dominates. The electron-hole mechanism is universal, namely does not depend on geometry (aspect ratio, topology of boundary conditions, properties of leads), while the evanescent modes mechanism depends on all of them. On basis of the results we determine, that while in absorption measurements and in DC transport in suspended graphene the first conductivity value was measured, the latter one would appear in experiments on small ballistic graphene flakes on substrate.
Despite extensive search for about a decade, specular Andreev reflection is only recently realized in bilayer graphene-superconductor interface. However, the evolution from the typical retro type Andreev reflection to the unique specular Andreev reflection in single layer graphene has not yet been observed. We investigate this transition by measuring the differential conductance at the van der Walls interface of single layer graphene and NbSe2 superconductor. We find that the normalized conductance becomes suppressed as we pass through the Dirac cone via tuning the Fermi level and bias energy, which manifests the transition from retro to non-retro type Andreev reflection. The suppression indicates the blockage of Andreev reflection beyond a critical angle of the incident electron with respect to the normal between the single layer graphene and the superconductor junction. The results are compared with a theoretical model of the corresponding setup.
We present an experimental study of nonlocal electrical signals near the Dirac point in graphene. The in-plane magnetic field dependence of the nonlocal signal confirms the role of spin in this effect, as expected from recent predictions of Zeeman spin Hall effect in graphene, but our experiments show that thermo-magneto-electric effects also contribute to nonlocality, and the effect is sometimes stronger than that due to spin. Thermal effects are seen to be very sensitive to sample details that do not influence other transport parameters.
The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy/spectroscopy on a mesoscopic graphene device, we directly observe the puddles growth, both in spatial extent and in amplitude, as the Dirac point is approached. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.
Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers cannot efficiently screen the impurity potential. We have studied time-dependent conductance fluctuations and magnetoresistance in graphene in the close vicinity of the Dirac point. We show that the fluctuations are due to the quantum interference effects due to scattering on impurities, and find an unusually large reduction of the relative noise power in magnetic field, possibly indicating that an additional symmetry plays an important role in this regime.
J. H. Bardarson
,J. Tworzyd{l}o
,P. W. Brouwer
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(2007)
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"Demonstration of one-parameter scaling at the Dirac point in graphene"
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Jens Hjorleifur Bardarson
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